发明授权
- 专利标题: Non-volatile storage latch
- 专利标题(中): 非易失性存储锁存器
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申请号: US396189申请日: 1999-09-14
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公开(公告)号: US6147922A公开(公告)日: 2000-11-14
- 发明人: Allan T. Hurst, Jr. , Jeff S. Sather , Jason B. Gadbois
- 申请人: Allan T. Hurst, Jr. , Jeff S. Sather , Jason B. Gadbois
- 申请人地址: NJ Morristown
- 专利权人: Honeywell, Inc.
- 当前专利权人: Honeywell, Inc.
- 当前专利权人地址: NJ Morristown
- 主分类号: G11C11/14
- IPC分类号: G11C11/14 ; G11C7/20 ; G11C11/15 ; G11C11/16 ; G11C14/00 ; H01L21/8246 ; H01L27/105 ; H01L27/22 ; H01L43/08 ; H03K3/037 ; H03K3/356 ; H03K3/45 ; G11C7/00
摘要:
In one aspect of the present invention, a non-volatile latching element is provided that includes one or more magnetic elements therein. By programming the magnetic elements to appropriate resistance values, the latching element assumes a pre-programmed state upon power up. The magnetic elements are preferably programmed using either a one or two layer word line. In another aspect of the present invention, the magnetic elements are formed as pseudo-spin valve structures utilizing only CoFe as the active ferromagnetic layers, with one ferromagnetic layer thinner than the other. This simplifies the design while maintaining the high moment material to achieve large GMR ratios.
公开/授权文献
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