- 专利标题： Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
-
申请号： US955393申请日： 1997-10-21
-
公开(公告)号： US6165956A公开(公告)日： 2000-12-26
- 发明人: Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
- 申请人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
- 申请人地址： CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： CA Fremont
- 主分类号： C11D1/00
- IPC分类号： C11D1/00 ; C11D3/02 ; C11D7/02 ; C11D7/08 ; C11D7/26 ; C11D11/00 ; C23G1/10 ; H01L21/02 ; H01L21/304 ; H01L21/306 ; H01L21/308 ; H01L21/3205 ; H01L21/321 ; C11D9/04 ; C11D15/00 ; C11D17/08
摘要：
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.