发明授权
- 专利标题: Semiconductor storage device
- 专利标题(中): 半导体存储设备
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申请号: US09484023申请日: 2000-01-18
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公开(公告)号: US06181620B2公开(公告)日: 2001-01-30
- 发明人: Masashi Agata , Kazunari Takahashi , Tsutomu Fujita , Naoki Kuroda , Toshio Yamada
- 申请人: Masashi Agata , Kazunari Takahashi , Tsutomu Fujita , Naoki Kuroda , Toshio Yamada
- 优先权: JP11-022499 19990129
- 主分类号: G11C1124
- IPC分类号: G11C1124
摘要:
The semiconductor storage device of this invention includes memory cells each having two transistors and one storage capacitor. Each memory cell is connected with a first word line and a first bit line for a first port and a second word line and a second bit line for a second port. The first and second bit lines are alternately disposed in an open bit line configuration. In the operation of the semiconductor storage device, in a period when a first precharge signal for precharging each first bit line or a first sense amplifier activating signal for activating a first sense amplifier is kept in an active state, a second precharge signal for precharging each second bit line and a second sense amplifier activating signal for activating a second sense amplifier are both placed in an inactive state.