发明授权
US06204071B1 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration
失效
具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
- 专利标题： Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration
- 专利标题（中）： 具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
-
申请号： US09408491申请日： 1999-09-30
-
公开(公告)号： US06204071B1公开(公告)日： 2001-03-20
- 发明人: Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
- 申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. Then anneal the device in the presence of a second longitudinal external magnetic field.
信息查询
