发明授权
US06246610B1 Symmetrical program and erase scheme to improve erase time degradation in NAND devices
有权
对称编程和擦除方案，以改善NAND器件中的擦除时间退化
- 专利标题： Symmetrical program and erase scheme to improve erase time degradation in NAND devices
- 专利标题（中）： 对称编程和擦除方案，以改善NAND器件中的擦除时间退化
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申请号： US09511652申请日： 2000-02-22
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公开(公告)号： US06246610B1公开(公告)日： 2001-06-12
- 发明人: K. Michael Han , Joseph G. Pawletko , Narbeh Derhacobian , Chi Chang
- 申请人： K. Michael Han , Joseph G. Pawletko , Narbeh Derhacobian , Chi Chang
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
A programming and erase method that extends erase time degradation of nonvolatile memory devices by using a constant erase voltage and a set of program voltages, where the average program voltage of the set of the program voltages is approximately equal to the constant erase voltage.
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