A layer of material is formed on a substrate in a partially formed integrated circuit on a wafer. The substrate undergoes a plasma annealing, during which the substrate is bombarded with ions. The plasma annealing may be performed by exposing the substrate to plasma that is generated from a nitrogen containing gas which is infused with energy. After the substrate is plasma annealed, a layer of a refractory metal nitride is deposited on the substrate. The layer of refractory metal nitride is then bombarded with a first set of ions. The bombardment of the refractory metal by the first set of ions may be achieved by performing a plasma annealing. The refractory metal nitride may be further bombarded by a second set of ions.