公开(公告)号：US06291343B1

公开(公告)日：2001-09-18

申请号：US09008796

申请日：1998-01-20

申请人： Jennifer Tseng ,  Mei Chang ,  Ling Chen ,  David C. Smith ,  Karl A. Littau ,  Chyi Chern ,  Marvin Liao

发明人： Jennifer Tseng ,  Mei Chang ,  Ling Chen ,  David C. Smith ,  Karl A. Littau ,  Chyi Chern ,  Marvin Liao

IPC分类号： H01L2124

CPC分类号： H01L21/76856 ,  C23C16/0245 ,  C23C16/34 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76841 ,  H01L21/76862 ,  H01L21/76864

摘要： A layer of material is formed on a substrate in a partially formed integrated circuit on a wafer. The substrate undergoes a plasma annealing, during which the substrate is bombarded with ions. The plasma annealing may be performed by exposing the substrate to plasma that is generated from a nitrogen containing gas which is infused with energy. After the substrate is plasma annealed, a layer of a refractory metal nitride is deposited on the substrate. The layer of refractory metal nitride is then bombarded with a first set of ions. The bombardment of the refractory metal by the first set of ions may be achieved by performing a plasma annealing. The refractory metal nitride may be further bombarded by a second set of ions.

摘要翻译： 在晶片上的部分形成的集成电路中的衬底上形成一层材料。 衬底经历等离子体退火，在此期间衬底被离子轰击。 等离子体退火可以通过将衬底暴露于由注入能量的含氮气体产生的等离子体来进行。 在对衬底进行等离子体退火之后，在衬底上沉积难熔金属氮化物层。 然后用第一组离子轰击难熔金属氮化物层。 可以通过进行等离子体退火来实现第一组离子对难熔金属的轰击。 耐火金属氮化物可以被第二组离子进一步轰击。

公开(公告)号：US5834068A

公开(公告)日：1998-11-10

申请号：US682844

申请日：1996-07-12

申请人： Chyi Chern ,  Wei Chen ,  Marvin Liao ,  Jennifer Meng Chu Tseng ,  Mei Chang

发明人： Chyi Chern ,  Wei Chen ,  Marvin Liao ,  Jennifer Meng Chu Tseng ,  Mei Chang

IPC分类号： C23C14/02 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285

CPC分类号： C23C16/463 ,  C23C16/46 ,  C23C16/52

摘要： A method for improving the characteristics of deposited thin films by improved control and stabilization of wafer surface temperatures. Further, the invention provides the ability to rapidly change the temperature of the wafer surface without the need to change the temperature of the chamber. The wafer is heated to an operating temperature by conventional means. A gas with high thermal conductivity, such as helium or hydrogen, is passed over the wafer to cool its surface to a desired temperature for the process to be performed. The flow rate is then adjusted to stabilize the temperature of the wafer and reduce surface temperature variations. Processing gases are then introduced into the chamber, and deposition onto the wafer commences. The maintenance of correct wafer surface temperature results in improved step coverage and conformality of the deposited film. Post-deposition steps such as plasma annealing may be performed using a gas compatible with the process at a flow rate which results in a temperature desirable for the post-deposition process.

摘要翻译： 通过改善晶片表面温度的控制和稳定性来改善沉积薄膜的特性的方法。 此外，本发明提供了快速改变晶片表面的温度而不需要改变腔的温度的能力。 通过常规方法将晶片加热至工作温度。 具有高导热性的气体（例如氦气或氢气）通过晶片，将其表面冷却至期望的温度以进行该过程。 然后调节流速以稳定晶片的温度并降低表面温度变化。 然后将处理气体引入室中，并且沉积到晶片上。 保持正确的晶片表面温度导致了沉积膜的阶梯覆盖和保形性的改善。 诸如等离子体退火之类的后沉积步骤可以使用与该工艺相容的气体以可以达到沉积后期望的温度的流速进行。

公开(公告)号：US5989999A

公开(公告)日：1999-11-23

申请号：US939914

申请日：1997-09-26

申请人： Timothy E. Levine ,  Ling Chen ,  Mei Chang ,  Roderick C. Mosely ,  Karl A. Littau ,  Ivo Raaijmakers

发明人： Timothy E. Levine ,  Ling Chen ,  Mei Chang ,  Roderick C. Mosely ,  Karl A. Littau ,  Ivo Raaijmakers

IPC分类号： C23C16/34 ,  C23C16/458 ,  C23C16/48 ,  C23C16/509 ,  C23C16/56 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76864 ,  C23C16/34 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer (film) of tantalum nitride material is deposited on the wafer. Next, the layer of tantalum nitride material is annealed. The deposition and annealing may both be accomplished in the same chamber, without need for removing the wafer from the chamber until both steps are completed.

摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积氮化钽材料层（膜）。 接下来，对氮化钽层进行退火。 沉积和退火都可以在相同的室中完成，而不需要从腔室中移除晶片，直到完成两个步骤。

公开(公告)号：US06309713B1

公开(公告)日：2001-10-30

申请号：US08884811

申请日：1997-06-30

申请人： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

发明人： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

IPC分类号： H05H124

CPC分类号： H01L21/76843 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/66583

摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

公开(公告)号：US5856240A

公开(公告)日：1999-01-05

申请号：US342522

申请日：1994-11-21

申请人： Ashok Sinha ,  Mei Chang ,  Ilya Perlov ,  Karl A. Littau ,  Alan F. Morrison ,  Lawrence Chung-Lai Lei

发明人： Ashok Sinha ,  Mei Chang ,  Ilya Perlov ,  Karl A. Littau ,  Alan F. Morrison ,  Lawrence Chung-Lai Lei

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/68 ,  H01L21/687 ,  C23C14/00

CPC分类号： C23C16/45519 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S438/935

摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

摘要翻译： 公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。 用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。 吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。 在加工过程中，真空进料管将基板安装到基座板上。 耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。 排气泵板改善了来自腔室的废气排出的均匀性。

公开(公告)号：US5326725A

公开(公告)日：1994-07-05

申请号：US31259

申请日：1993-03-11

申请人： Semyon Sherstinsky ,  Charles C. Harris ,  Mei Chang ,  Dale R. Du Bois ,  James F. Roberts ,  Susan Telford ,  Ronald L. Rose ,  Meng C. Tseng ,  Karl A. Littau

发明人： Semyon Sherstinsky ,  Charles C. Harris ,  Mei Chang ,  Dale R. Du Bois ,  James F. Roberts ,  Susan Telford ,  Ronald L. Rose ,  Meng C. Tseng ,  Karl A. Littau

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

摘要： A clamping ring having a downwardly extending finger that mates with a pocket in the periphery of a susceptor for supporting a wafer in a chemical vapor deposition chamber, provides alignment of the clamping ring, the wafer and the susceptor. A source of inert gas connected to the pocket provides a positive pressure in the pocket that prevents reactive gas in the chamber from reaching the edge and backside of the wafer. A source of vacuum connected to the susceptor support surface ensures good contact between the wafer and the susceptor.The clamping ring also has a lip extending over the top surface of the wafer having a rear surface that has a negative angle with respect to the upper surface of the clamping ring, providing a knife edge seal to the wafer, reducing the area of contact between the clamping ring and the wafer and providing a reduced area of thermal contact between the clamping ring and the wafer.

摘要翻译： 具有向下延伸的指状物的夹紧环，其与基座的周边中的口相配合，用于在化学气相沉积室中支撑晶片，提供夹紧环，晶片和基座的对准。 连接到口袋的惰性气体源在口袋中提供正压力，防止腔室中的反应性气体到达晶片的边缘和背面。 连接到基座支撑表面的真空源确保了晶片和基座之间良好的接触。 夹紧环还具有在晶片的顶表面上延伸的唇缘，其具有相对于夹紧环的上表面具有负角度的后表面，为晶片提供刀刃密封，从而减小了 夹紧环和晶片，并且在夹紧环和晶片之间提供减小的热接触面积。

公开(公告)号：US5516367A

公开(公告)日：1996-05-14

申请号：US342670

申请日：1994-11-21

申请人： Lawrence C. Lei ,  Ilya Perlov ,  Karl A. Littau ,  Alan F. Morrison ,  Mei Chang ,  Ashok K. Sinha

发明人： Lawrence C. Lei ,  Ilya Perlov ,  Karl A. Littau ,  Alan F. Morrison ,  Mei Chang ,  Ashok K. Sinha

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/68 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S438/935

摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

摘要翻译： 公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。 用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。 吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。 在加工过程中，真空进料管将基板安装到基座板上。 耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。 排气泵板改善了来自腔室的废气排放的均匀性。

公开(公告)号：US06699530B2

公开(公告)日：2004-03-02

申请号：US08808246

申请日：1997-02-28

申请人： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

发明人： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

IPC分类号： B05D306

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864

摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

公开(公告)号：US6155198A

公开(公告)日：2000-12-05

申请号：US677185

申请日：1996-07-09

申请人： Michael Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale DuBois ,  Alan F. Morrison

发明人： Michael Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale DuBois ,  Alan F. Morrison

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  C23C16/509 ,  C23C16/56 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01L21/28512 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01J2237/2001 ,  H01J2237/336

摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 当晶片处于处理室时，在晶片上形成一层材料。 接下来，当晶片处于处理室时，材料层被氧化。 用于原位实施这种结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和rf信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

公开(公告)号：US20090151633A1

公开(公告)日：2009-06-18

申请号：US12371138

申请日：2009-02-13

申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： C23C16/54

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.

摘要翻译： 本文描述的实施例涉及用于产生半导体处理系统的前体的装置。 在一个实施例中，描述了在气相沉积工艺期间产生前体气体的装置。 该装置包括容纳盖和底部之间的内部容积的容器，设置在盖上的气体入口和气体出口，与底部相连并从内部容积的下部区域延伸到上部区域的多个筒仓 ，以及包含在罐的下部区域内的氯浓度为约5ppm以下的钽前体。