公开(公告)号：US20110141206A1

公开(公告)日：2011-06-16

申请号：US12639347

申请日：2009-12-16

Applicant: Patrick C. P. Cheung ,  Karl A. Littau ,  Michael Y. Young ,  Steven A. Buhler

Inventor： Patrick C. P. Cheung ,  Karl A. Littau ,  Michael Y. Young ,  Steven A. Buhler

IPC: B41J2/045

CPC classification number: B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1629

Abstract: A side-firing printhead comprises a stack that includes a plurality of slices, wherein each slice includes a PCB trigger layer and a diaphragm layer, the PCB trigger layer controls the flow of ink from the diaphragm layer, a first side of the diaphragm layer includes at least one cavity that delivers ink via one or more aperture braces. An aperture plate is coupled to one side of the stack to interface to the diaphragm layers contained therein, wherein the aperture plate contains a plurality of apertures that are located at each aperture brace. A first bracket is disposed on the top of the stack and a second bracket is disposed on the bottom of the stack, wherein at least one fastener couples the second bracket to the first bracket such that a predetermined amount of pressure is applied to the stack.

Abstract translation: 侧面喷射打印头包括包括多个切片的堆叠，其中每个切片包括PCB触发层和隔膜层，所述PCB触发层控制来自所述隔膜层的墨的流动，所述隔膜层的第一侧包括 至少一个通过一个或多个孔径支架输送墨水的空腔。 孔板联接到堆叠的一侧以与包含在其中的隔膜层相接合，其中孔板包含位于每个孔支架处的多个孔。 第一支架设置在堆叠的顶部，并且第二支架设置在堆叠的底部，其中至少一个紧固件将第二支架联接到第一支架，使得预定量的压力施加到堆叠。

公开(公告)号：US07901130B2

公开(公告)日：2011-03-08

申请号：US12497993

申请日：2009-07-06

Applicant: Scott Jong Ho Limb ,  Michael Yu Tak Young ,  Karl A. Littau

Inventor： Scott Jong Ho Limb ,  Michael Yu Tak Young ,  Karl A. Littau

IPC: G01K15/00

CPC classification number: G01K7/223 ,  G01K15/00 ,  Y10T29/49085

Abstract: The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.

Abstract translation: 目前描述的实施例涉及用集成薄膜加热器局部加热的薄膜热敏电阻的校准方法和系统。 最初，打印头温度是测量或参考。 然后，测量瞬态热敏电阻电阻并用于确定较高温度下的热敏电阻电阻。 值得注意的是，该校准方法有利地被实现为现有工艺的步骤，而不必将打印头暴露于工作温度。 在目前描述的实施例的一些实施方案中，一旦校准就可能需要修整热敏电阻。

公开(公告)号：US20100124619A1

公开(公告)日：2010-05-20

申请号：US12271408

申请日：2008-11-14

Applicant: Baomin XU ,  Karl A. LITTAU ,  Scott A. ELROD

Inventor： Baomin XU ,  Karl A. LITTAU ,  Scott A. ELROD

IPC: B05D3/06 ,  B05D5/12 ,  C23F1/04 ,  C25D5/34

CPC classification number: C23C18/161 ,  C23C18/1632 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  H01L31/022425 ,  Y02E10/50

Abstract: Inline methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings by printing electroless plating solution into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating.

Abstract translation: 用于形成光伏电池电极结构的在线方法，其中所述光伏电池包括其上具有钝化层的半导体衬底，包括提供通过所述钝化层到所述半导体衬底的多个接触开口，选择性地将接触金属电镀到所述多个接触中 通过将化学镀溶液印刷到多个接触开口中以沉积接触金属，在沉积的接触金属上沉积含金属的材料，以及烧结沉积的接触金属和沉积的含金属材料的开口。 含金属的材料可以包括含有银或银合金以及玻璃料的糊状物，并且基本上没有完全不含铅。 所述方法还可以使用钝化层的光激活或使用种子层来辅助镀覆。

公开(公告)号：US20100059377A1

公开(公告)日：2010-03-11

申请号：US12206424

申请日：2008-09-08

Applicant: Karl A. Littau ,  Francisco E. Torres

Inventor： Karl A. Littau ,  Francisco E. Torres

IPC: B01D61/42 ,  B01D61/46 ,  B01D61/52

CPC classification number: B01D61/445 ,  B01D53/62 ,  B01D53/77 ,  B01D53/96 ,  B01D2251/306 ,  B01D2251/606 ,  B01D2257/504 ,  C02F1/4693 ,  Y02C10/04

Abstract: A system and method for recovery of CO2 includes an aqueous capture device having a capture solution. The aqueous capture device is arranged to receive gas and to capture components from the gas including at least CO2. An electrodialysis unit in operative connection with the capture device performs an electrodialysis operation on the capture solution including at least the CO2, wherein a CO2 rich process stream and a regenerated capture solution are generated from the capture solution including at least the CO2. The CO2 rich process stream is a pressurized process stream at a pressure which maintains the CO2 substantially within the CO2 rich process stream, while in the electrodialysis unit. In another alternative, at least the pH of the capture stream is controlled.

Abstract translation: 用于回收CO 2的系统和方法包括具有捕获溶液的水性捕获装置。 水性捕获装置被布置成接收气体并从包括至少CO 2的气体中捕获组分。 与采集装置可操作地连接的电渗析装置对包括至少二氧化碳的捕获溶液进行电渗析操作，其中从包含至少二氧化碳的捕获溶液产生富CO 2的工艺流和再生的捕获溶液。 富CO2过程流是在电渗析单元中将CO 2基本维持在富CO2过程流内的压力下的加压工艺流。 在另一个替代方案中，至少捕获流的pH被控制。

公开(公告)号：US20090156003A1

公开(公告)日：2009-06-18

申请号：US12335976

申请日：2008-12-16

Applicant: MING XI ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

Inventor： MING XI ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

IPC: H01L21/285 ,  H01L21/44

CPC classification number: C23C16/0272 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.

Abstract translation: 在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中 处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层 沉积工艺。 在一个实例中，含钨层和钨体层沉积在相同的处理室内。

公开(公告)号：US07234214B2

公开(公告)日：2007-06-26

申请号：US11084579

申请日：2005-03-18

Applicant: Baomin Xu ,  Steven A. Buhler ,  Michael C. Weisberg ,  William S. Wong ,  Scott E. Solberg ,  Karl A. Littau ,  John S. Fitch ,  Scott A. Elrod

Inventor： Baomin Xu ,  Steven A. Buhler ,  Michael C. Weisberg ,  William S. Wong ,  Scott E. Solberg ,  Karl A. Littau ,  John S. Fitch ,  Scott A. Elrod

IPC: H04R17/00

CPC classification number: B41J2/161 ,  B41J2/1623 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1637 ,  B41J2/1646 ,  H01L41/313 ,  H01L41/314 ,  H01L41/331 ,  H01L2221/68368 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49155 ,  Y10T29/4981

Abstract: A method of producing at least one thick film element, including depositing a material on a surface of at least one first substrate to form at least one thick film element structure having a thickness of approximately greater than 10 μm to 100 μm. Then, then the at least one thick film element structure is bonded to a second substrate, and the at least one first substrate is removed from the at least one thick film element structure using a lift-off process employing radiation energy. The lift-off process including emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the first surface of the first substrate. The first substrate being substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment.

Abstract translation: 一种生产至少一个厚膜元件的方法，包括在至少一个第一基底的表面上沉积材料以形成至少一个厚度大约在10至100μm的厚膜元件结构。 然后，将至少一个厚膜元件结构接合到第二基板，并且使用采用辐射能的剥离工艺将至少一个第一基板从至少一个厚膜元件结构移除。 剥离过程包括从辐射源将辐射束从第一衬底发射到在第一衬底的第一表面处形成在第一衬底和至少一个厚膜元件结构之间的附接界面。 第一衬底在辐射束的波长处基本上是透明的，允许辐射束在界面处产生足够的能量以破坏附件。

公开(公告)号：US07091650B2

公开(公告)日：2006-08-15

申请号：US11017494

申请日：2004-12-20

Applicant: Baomin Xu ,  Steven A. Buhler ,  Michael C. Weisberg ,  William S. Wong ,  Scott E. Solberg ,  Karl A. Littau ,  John S. Fitch ,  Scott A. Elrod

Inventor： Baomin Xu ,  Steven A. Buhler ,  Michael C. Weisberg ,  William S. Wong ,  Scott E. Solberg ,  Karl A. Littau ,  John S. Fitch ,  Scott A. Elrod

IPC: H01L41/08

CPC classification number: B41J2/161 ,  B41J2/1623 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1637 ,  B41J2/1646 ,  H01L41/313 ,  H01L41/314 ,  H01L41/331 ,  H01L2221/68368 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49155 ,  Y10T29/4981

Abstract: A piezoelectric thick film element array includes at least one piezoelectric element structure having a thickness between 10 μm to 100 μm formed by a deposition process. The at least one piezoelectric element is patterned during the deposition process, and includes a first electrode deposited on a first surface of the piezoelectric elements structure, and a second electrode deposited on a second surface of the piezoelectric element structure. In a further embodiment, several devices are provided using a piezoelectric element or an array having a piezoelectric element structure with a thickness of between 10 μm to 100 μm formed by a deposition process. These devices include microfluidic ejectors, transducer arrays and catheters.

Abstract translation: 压电厚膜元件阵列包括通过沉积工艺形成的至少一个压电元件结构，其厚度在10um至100μm之间。 所述至少一个压电元件在所述沉积工艺期间被图案化，并且包括沉积在所述压电元件结构的第一表面上的第一电极和沉积在所述压电元件结构的第二表面上的第二电极。 在另一实施例中，使用压电元件或具有通过沉积工艺形成的厚度在10um至100μm之间的压电元件结构的阵列来提供若干器件。 这些装置包括微流体喷射器，换能器阵列和导管。

公开(公告)号：US6033480A

公开(公告)日：2000-03-07

申请号：US729210

申请日：1996-10-15

Applicant: Aihua Chen ,  Karl A. Littau ,  Dashun S. Zhou

Inventor： Aihua Chen ,  Karl A. Littau ,  Dashun S. Zhou

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/00

CPC classification number: C23C16/458 ,  C23C16/45521 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  Y10S156/916

Abstract: This invention provides a method and apparatus for substantially eliminating deposition on the edge of a wafer supported on a pedestal in a processing chamber. Process gas flow onto the wafer surface is inhibited from reaching the wafer edge and backside, by means of a shadow ring placed over the wafer without touching it. Deposition on the edge and backside of the wafer are therefore substantially eliminated. The shadow ring defines a cavity which circumscribes the wafer edge, into which purge gas is flowed. This purge gas flows out from the cavity through the gap between the shadow ring and the upper surface of the wafer. Alignment pins are placed on the wafer supporting surface of the pedestal. These pins have sloping surfaces and are arranged to guide the wafer to a centered position on the pedestal when the wafer is placed on the pedestal. These pins also serve to align the shadow ring to the pedestal and thence to the wafer. The shadow ring has a plurality of keyed formations which mate to the pins, and as the shadow ring and pedestal are brought together, the pins serve to align the shadow ring. This precise rotational alignment and centering of the shadow ring results in substantial elimination of edge deposition. The keyed formations have elliptical cross-sections to provide for radial movement of the pins with respect to the keyed formations due to thermal expansion.

Abstract translation: 本发明提供一种用于基本上消除在处理室中的基座上支撑的晶片的边缘上的沉积的方法和装置。 通过放置在晶片上的阴影环而不接触晶片表面的工艺气体流被抑制到达晶片边缘和背面。 因此，基本上消除了在晶片的边缘和背面上的沉积。 阴影环限定了围绕晶片边缘的空腔，吹扫气体流入该空腔。 该清洗气体通过阴影环和晶片的上表面之间的间隙从腔体流出。 对准销被放置在基座的晶片支撑表面上。 这些销具有倾斜表面并且被布置成当晶片被放置在基座上时将晶片引导到基座上的居中位置。 这些引脚还用于将阴影环对准基座，从而将其对准晶片。 阴影环具有与销相配合的多个键状结构，并且当阴影环和基座被聚集在一起时，销用于对准阴影环。 阴影环的这种精确的旋转对准和定心导致边缘沉积的显着消除。 键合结构具有椭圆形横截面，以提供由于热膨胀而使销相对于键合地层的径向移动。

公开(公告)号：US5856240A

公开(公告)日：1999-01-05

申请号：US342522

申请日：1994-11-21

Applicant: Ashok Sinha ,  Mei Chang ,  Ilya Perlov ,  Karl A. Littau ,  Alan F. Morrison ,  Lawrence Chung-Lai Lei

Inventor： Ashok Sinha ,  Mei Chang ,  Ilya Perlov ,  Karl A. Littau ,  Alan F. Morrison ,  Lawrence Chung-Lai Lei

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/68 ,  H01L21/687 ,  C23C14/00

CPC classification number: C23C16/45519 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S438/935

Abstract: Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

Abstract translation: 公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。 用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。 吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。 在加工过程中，真空进料管将基板安装到基座板上。 耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。 排气泵板改善了来自腔室的废气排出的均匀性。

公开(公告)号：US08784632B2

公开(公告)日：2014-07-22

申请号：US12969465

申请日：2010-12-15

Applicant: Matthew D. Eisaman ,  Karl A. Littau ,  Daniel Larner

Inventor： Matthew D. Eisaman ,  Karl A. Littau ,  Daniel Larner

IPC: B01D61/46

CPC classification number: B01D61/422 ,  B01D53/1425 ,  B01D53/1475 ,  B01D53/62 ,  B01D53/96 ,  B01D61/445 ,  B01D61/50 ,  B01D61/52 ,  B01D63/085 ,  B01D2257/504 ,  B01D2313/143 ,  B01D2313/146 ,  B01D2313/24 ,  B01D2313/28 ,  B01D2313/30 ,  B01D2313/345 ,  C01B32/50 ,  Y02C10/04 ,  Y02C10/06 ,  Y02P20/152

Abstract: An apparatus for performing electrodialysis at pressures greater than or equal to the ambient pressure is described. The apparatus includes an electrodialysis membrane stack and housing. The electrodialysis membrane stack includes at least one electrodialysis cell. The electrodialysis apparatus includes electrodes that apply voltage across the electrodialysis stack. The housing pressurizes the electrodialysis stack at a stack pressure. The housing includes a cell chamber that receives the electrodialysis stack, the cell chamber including at least one pressurization port communicating with the cell chamber such that a portion of electrode solution is transmittable into a region of the cell chamber outside the electrodialysis stack. A system for performing electrodialysis at pressures greater than ambient pressure includes at least two solution loops, an electrode solution loop, and an electrodialysis apparatus operatively connected to the solution and electrode solution loops that performs electrodialysis at a stack pressure that is greater than ambient pressure.

Abstract translation: 描述了在大于或等于环境压力的压力下进行电渗析的装置。 该装置包括电渗析膜堆和壳体。 电渗析膜堆叠包括至少一个电渗析池。 电渗析装置包括施加电渗析堆叠电压的电极。 外壳在堆叠压力下对电渗析堆叠进行加压。 壳体包括容纳电渗析堆的细胞室，细胞室包括与细胞室连通的至少一个加压端口，使得电极溶液的一部分可透射到电渗析堆层外部的细胞室的区域。 用于在大于环境压力的压力下进行电渗析的系统包括至少两个溶液回路，电极溶液回路和电解质设备，所述电解液循环和电渗析装置可操作地连接到在大于环境压力的叠层压力下进行电渗析的溶液和电极溶液回路。