发明授权
- 专利标题： Semiconductor device and production thereof
- 专利标题（中）： 半导体器件及其制造
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申请号： US08610488申请日： 1996-03-04
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公开(公告)号： US06326284B1公开(公告)日： 2001-12-04
- 发明人: Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasuhide Hagiwara , Hiroyuki Ohta , Asao Nishimura
- 申请人： Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasuhide Hagiwara , Hiroyuki Ohta , Asao Nishimura
- 优先权： JP7-048106 19950308
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
A semiconductor device produced by forming an oxide film on a substrate, heat treating the oxide film at a temperature of 800° C. or higher in an inert atmosphere, followed by conventional steps for formation of a transistor, is improved in electrical reliability due to relaxation of stress generated in the oxide film or in the surface of substrate.
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