发明授权
US06413793B1 Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers
失效
在绝缘体上硅晶片上形成的单晶硅结构上形成突起的方法
- 专利标题： Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers
- 专利标题（中）： 在绝缘体上硅晶片上形成的单晶硅结构上形成突起的方法
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申请号： US09858469申请日： 2001-05-17
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公开(公告)号： US06413793B1公开(公告)日： 2002-07-02
- 发明人: Chuang-Chia Lin , Peter M. Gulvin , Alex T. Tran , Nena Liakopoulos
- 申请人： Chuang-Chia Lin , Peter M. Gulvin , Alex T. Tran , Nena Liakopoulos
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A semiconductor structure includes a substrate, a sacrificial layer formed on or over the substrate, and a structural layer formed on or over the sacrificial layer. At least one opening is formed in the structural layer. At least one opening is formed in the sacrificial layer below the at least one opening in the structural layer. The at least one opening in the structural layer and the at least one opening in the sacrificial layer are at least partially filled with a filler material. At least one portion of the structural layer is removed to define at least one microstructure. The sacrificial layer is removed such that the at least one microstructure is released from the substrate and the filler material forms one or more protrusions on the at least one microstructure, and/or one or more anchors anchoring the at least one microstructure to the substrate.
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