公开(公告)号：US06413793B1

公开(公告)日：2002-07-02

申请号：US09858469

申请日：2001-05-17

申请人： Chuang-Chia Lin ,  Peter M. Gulvin ,  Alex T. Tran ,  Nena Liakopoulos

发明人： Chuang-Chia Lin ,  Peter M. Gulvin ,  Alex T. Tran ,  Nena Liakopoulos

IPC分类号： H01L2100

CPC分类号： B81B3/001

摘要： A semiconductor structure includes a substrate, a sacrificial layer formed on or over the substrate, and a structural layer formed on or over the sacrificial layer. At least one opening is formed in the structural layer. At least one opening is formed in the sacrificial layer below the at least one opening in the structural layer. The at least one opening in the structural layer and the at least one opening in the sacrificial layer are at least partially filled with a filler material. At least one portion of the structural layer is removed to define at least one microstructure. The sacrificial layer is removed such that the at least one microstructure is released from the substrate and the filler material forms one or more protrusions on the at least one microstructure, and/or one or more anchors anchoring the at least one microstructure to the substrate.

摘要翻译： 半导体结构包括衬底，形成在衬底上或衬底上的牺牲层以及形成在牺牲层上或之上的结构层。 在结构层中形成至少一个开口。 在结构层中的至少一个开口下方的牺牲层中形成至少一个开口。 结构层中的至少一个开口和牺牲层中的至少一个开口至少部分地填充有填充材料。 去除结构层的至少一部分以限定至少一个微结构。 去除牺牲层，使得至少一个微结构从衬底释放并且填充材料在至少一个微结构上形成一个或多个突起，和/或一个或多个将至少一个微结构锚定到衬底的锚固件。