发明授权
- 专利标题： Specimen surface processing method and apparatus
- 专利标题（中）： 试样表面处理方法和装置
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申请号： US09393893申请日： 1999-09-10
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公开(公告)号： US06492277B1公开(公告)日： 2002-12-10
- 发明人: Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
- 申请人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.
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