公开(公告)号：US06677244B2

公开(公告)日：2004-01-13

申请号：US10135516

申请日：2002-05-01

申请人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

发明人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

IPC分类号： H01L21302

CPC分类号： H01J37/32082 ,  H01L21/32136

摘要： A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.

摘要翻译： 用于蚀刻具有栅极氧化膜的样品的等离子体处理方法包括使用电磁波在真空室中产生等离子体，向样品施加rf偏置功率，在样品的充电电压达到击穿之前关闭rf偏置功率 电压，在样品的充电电压基本上下降之后接通rf偏置功率，并且重复接通和关断rf偏置功率以处理样品。 关闭时间至少比准时更长。

公开(公告)号：US07049243B2

公开(公告)日：2006-05-23

申请号：US10754594

申请日：2004-01-12

申请人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

发明人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

IPC分类号： H01L21/302

CPC分类号： H01J37/32082 ,  H01L21/32136

摘要： A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.

摘要翻译： 一种用于蚀刻具有使用电磁波在真空室中产生等离子体的栅极氧化膜的样品的等离子体处理方法，对样品施加rf偏置功率，在样品的充电电压达到击穿之前关断rf偏置功率 栅极氧化膜的电压在样品的充电电压基本上下降之后导通rf偏置功率，并重复rf偏置功率的导通和截止以处理样品。 关断时间至少比导通时间长，并且通过连续供电以在反复打开和关闭rf偏置功率期间产生等离子体而产生等离子体。

公开(公告)号：US06492277B1

公开(公告)日：2002-12-10

申请号：US09393893

申请日：1999-09-10

申请人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

发明人： Tetsuo Ono ,  Yasuhiro Nishimori ,  Takashi Sato ,  Naoyuki Kofuji ,  Masaru Izawa ,  Yasushi Goto ,  Ken Yoshioka ,  Hideyuki Kazumi ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takafumi Tokunaga ,  Motohiko Yoshigai

IPC分类号： H01L21302

CPC分类号： H01J37/32082 ,  H01L21/32136

摘要： Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.

摘要翻译： 抑制其等离子体蚀刻对半导体元件的电气损伤。 在通过等离子体蚀刻处理精细图案时，在图案的一部分处的电荷电位达到与所述精细图案互连的栅极氧化膜的击穿电压之前，施加到样本的高频电源被关断 ，然后当图案部分的电荷电位基本上下降时，高频电源被接通。 该开启和关闭控制以重复的操作模式进行。

公开(公告)号：US06660647B1

公开(公告)日：2003-12-09

申请号：US09646012

申请日：2001-01-11

申请人： Tetsuo Ono ,  Takafumi Tokunaga ,  Tadashi Umezawa ,  Motohiko Yoshigai ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takashi Sato ,  Yasushi Goto

发明人： Tetsuo Ono ,  Takafumi Tokunaga ,  Tadashi Umezawa ,  Motohiko Yoshigai ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takashi Sato ,  Yasushi Goto

IPC分类号： H01L2100

CPC分类号： H01J37/32082 ,  H01L21/32136 ,  H01L21/32139

摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.

摘要翻译： 具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤： 在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压， 以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

公开(公告)号：US07259104B2

公开(公告)日：2007-08-21

申请号：US10671608

申请日：2003-09-29

申请人： Tetsuo Ono ,  Takafumi Tokunaga ,  Tadashi Umezawa ,  Motohiko Yoshigai ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takashi Sato ,  Yasushi Goto

发明人： Tetsuo Ono ,  Takafumi Tokunaga ,  Tadashi Umezawa ,  Motohiko Yoshigai ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takashi Sato ,  Yasushi Goto

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01J37/32082 ,  H01L21/32136 ,  H01L21/32139

摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.

摘要翻译： 具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤： 在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压， 以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

公开(公告)号：US06767838B1

公开(公告)日：2004-07-27

申请号：US09691119

申请日：2000-10-19

申请人： Tetsuo Ono ,  Tatsumi Mizutani ,  Ryouji Hamasaki ,  Tokuo Kure ,  Takafumi Tokunaga ,  Masayuki Kojima

发明人： Tetsuo Ono ,  Tatsumi Mizutani ,  Ryouji Hamasaki ,  Tokuo Kure ,  Takafumi Tokunaga ,  Masayuki Kojima

IPC分类号： H01L2128

CPC分类号： H01J37/32137 ,  C23F4/00 ,  H01J37/32706 ,  H01L21/32137

摘要： A method and apparatus of treating a surface of a sample. A sample is arranged on a stage provided in a chamber, an etching gas is continuously supplied into the chamber and a plasma is generated from the etching gas. An rf bias at a frequency of 100 kHz or higher is applied to the stage independently of the generation of the plasma, and the rf bias is modulated at a frequency of 100 Hz to 10 kHz. Thereby, a surface treatment in which a minimum feature size is 1 &mgr;m or smaller is performed on the sample.

摘要翻译： 一种处理样品表面的方法和装置。 将样品布置在设置在室中的台上，将蚀刻气体连续地供应到室中，并从蚀刻气体产生等离子体。 频率为100kHz或更高的rf偏置与等离子体的产生无关地施加到载物台，并且以100Hz至10kHz的频率调制rf偏置。 由此，对样本进行最小特征尺寸为1μm以下的表面处理。

公开(公告)号：US06849191B2

公开(公告)日：2005-02-01

申请号：US09249292

申请日：1999-02-12

申请人： Tetsuo Ono ,  Tatsumi Mizutani ,  Ryouji Hamasaki ,  Tokuo Kure ,  Takafumi Tokunaga ,  Masayuki Kojima

发明人： Tetsuo Ono ,  Tatsumi Mizutani ,  Ryouji Hamasaki ,  Tokuo Kure ,  Takafumi Tokunaga ,  Masayuki Kojima

IPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32137 ,  C23F4/00 ,  H01J37/32706 ,  H01L21/32137

摘要： According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, including a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supply source for continuously supplying an etching gas for plasma generation into the chamber; a plasma generator for generating a high-density plasma in the chamber; a bias power supply for applying a bias voltage of 100 kHz or higher to the stage independently of the plasma generation; and a pulse modulator for modulating the bias power supply at a frequency of 100 Hz to 10 kHz, wherein a surface treatment in which the minimum feature size is 1 μm or smaller is performed on the sample placed on the stage.

摘要翻译： 根据本发明，提供了一种用于通过等离子体蚀刻处理精细图案的样品表面处理装置，包括设置在其中放置待进行表面处理的样品的室中的台阶; 蚀刻气体供给源，用于将用于等离子体产生的蚀刻气体连续地供应到所述室中; 用于在所述室中产生高密度等离子体的等离子体发生器; 偏置电源，用于独立于等离子体产生而向所述载台施加100kHz或更高的偏置电压; 以及用于以100Hz至10kHz的频率调制偏置电源的脉冲调制器，其中对放置在载物台上的样品执行最小特征尺寸为1um或更小的表面处理。

公开(公告)号：US06309980B1

公开(公告)日：2001-10-30

申请号：US09564754

申请日：2000-05-04

申请人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

发明人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

IPC分类号： H01L2100

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。

公开(公告)号：US5962347A

公开(公告)日：1999-10-05

申请号：US188371

申请日：1998-11-10

申请人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

发明人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/70 ,  H01L21/768 ,  H01L21/77 ,  H01L21/00

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

公开(公告)号：USRE39895E1

公开(公告)日：2007-10-23

申请号：US10094157

申请日：2002-03-08

申请人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

发明人： Takafumi Tokunaga ,  Sadayuki Okudaira ,  Tatsumi Mizutani ,  Kazutami Tago ,  Hideyuki Kazumi ,  Ken Yoshioka

IPC分类号： H01L21/00

CPC分类号： H01L21/76802 ,  H01L21/31116

摘要： To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

摘要翻译： 为了在LSI的制造中以高选择率和高精度实现蚀刻，当通过使惰性气体激发成亚稳态来干法蚀刻半导体衬底上的薄膜时，反应气体的解离物质的组成被精确地控制 状态在等离子体和氟里昂气体中彼此相互作用并选择性地获得期望的解离物种。