- 专利标题： Solid-state memory with magnetic storage cells
-
申请号： US09871387申请日： 2001-05-31
-
公开(公告)号： US06607924B2公开(公告)日： 2003-08-19
- 发明人: James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
- 申请人： James A. Brug , Lung T. Tran , Thomas C. Anthony , Manoj K. Bhattacharyya , Janice Nickel
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
公开/授权文献
- US20020013004A1 Solid-state memory with magnetic storage cells 公开/授权日：2002-01-31
信息查询
