发明授权
- 专利标题： Semiconductor device having heat detecting element and insulating cavity and method of manufacturing thereof
- 专利标题（中）： 具有热检测元件和绝缘腔的半导体器件及其制造方法
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申请号： US10368207申请日： 2003-02-18
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公开(公告)号： US06617659B2公开(公告)日： 2003-09-09
- 发明人: Hiroyoshi Komobuchi , Yoshikazu Chatani , Takahiro Yamada , Rieko Nishio , Hiroaki Uozumi , Masayuki Masuyama , Takumi Yamaguchi
- 申请人： Hiroyoshi Komobuchi , Yoshikazu Chatani , Takahiro Yamada , Rieko Nishio , Hiroaki Uozumi , Masayuki Masuyama , Takumi Yamaguchi
- 优先权： JP11-310553 19991101; JP11-329516 19991119
- 主分类号： H01L2714
- IPC分类号： H01L2714
摘要：
The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
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