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    Solid state image sensor
    3.
    发明授权
    Solid state image sensor 有权
    固态图像传感器

    公开(公告)号：US07187410B2

    公开(公告)日：2007-03-06

    申请号：US10087824

    申请日：2002-03-05

    申请人： Takumi Yamaguchi ,  Hiroyoshi Komobuchi

    发明人： Takumi Yamaguchi ,  Hiroyoshi Komobuchi

    IPC分类号： H04N3/14

    CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3741

    摘要： In a MOS type sensor including a floating diffusion (FD) amplifier in each pixel, the number of pulse lines is reduced, so as to improve the numerical aperture. For this purpose, a read pulse for a read transistor of a first pixel and a reset pulse for a reset transistor of a second pixel adjacent to the first pixel in a column direction are supplied through a common gate line; a LOW level potential of a drain line connected to a drain region (a region for supplying a pulse voltage to an FD portion through the reset transistor) of the first pixel is set to a potential higher than a potential depth of a photodiode of the first pixel in resetting the second pixel; and potential below the gate of the reset transistor of the first pixel obtained by applying a LOW level voltage to this gate is set to a potential higher than the LOW level potential of the drain line.

    摘要翻译： 在包括每个像素中的浮动扩散（FD）放大器的MOS型传感器中，脉冲数量减少，从而提高数值孔径。 为此，通过公共栅极线提供第一像素的读取晶体管的读取脉冲和与列方向上的与第一像素相邻的第二像素的复位晶体管的复位脉冲; 连接到第一像素的漏极区域（用于向通过复位晶体管的FD部分提供脉冲电压的区域）的漏极线的低电位电位被设置为高于第一像素的光电二极管的电位深度的电位 复位第二像素的像素; 并且通过向该栅极施加低电平电压而获得的第一像素的复位晶体管的栅极之下的电位被设置为高于漏极线的低电平电位的电位。

    Solid state image sensor
    4.
    发明授权
    Solid state image sensor 有权
    固态图像传感器

    公开(公告)号：US07180544B2

    公开(公告)日：2007-02-20

    申请号：US10086871

    申请日：2002-03-04

    申请人： Takumi Yamaguchi ,  Hiroyoshi Komobuchi

    发明人： Takumi Yamaguchi ,  Hiroyoshi Komobuchi

    IPC分类号： H04N3/14

    CPC分类号： H04N5/23241 ,  H04N5/3741 ,  H04N5/3742

    摘要： The consumed power of a MOS type sensor including a floating diffusion (FD) amplifier in each pixel is reduced. For this purpose, drain regions (regions for supplying a pulse voltage to FD portions through reset transistors) of unit pixels are connected to different drain lines row by row, so as to selectively supply a power pulse to each row. The power pulse is set to a HIGH level potential at least during a period when signal charge stored in the FD portion is reset and a period when the signal charge stored in the FD portion is detected.

    摘要翻译： 在每个像素中包括浮动扩散（FD）放大器的MOS型传感器的消耗功率减小。 为此，将单位像素的漏极区域（通过复位晶体管的FD部分提供脉冲电压的区域）逐行连接到不同的排列线，以便选择性地向每行提供功率脉冲。 至少在存储在FD部分中的信号电荷被复位并且检测到存储在FD部分中的信号电荷的周期的时段期间，功率脉冲被设置为高电平电位。

    Imaging device with vertical charge transfer paths having appropriate lengths and/or vent portions
    5.
    发明授权
    Imaging device with vertical charge transfer paths having appropriate lengths and/or vent portions 有权
    具有垂直电荷转移路径的成像装置具有适当的长度和/或排气部分

    公开(公告)号：US06985182B1

    公开(公告)日：2006-01-10

    申请号：US09717758

    申请日：2000-11-21

    申请人： Yasuhiro Morinaka ,  Hiroyoshi Komobuchi ,  Takumi Yamaguchi ,  Sei Suzuki

    发明人： Yasuhiro Morinaka ,  Hiroyoshi Komobuchi ,  Takumi Yamaguchi ,  Sei Suzuki

    IPC分类号： H04N5/335

    CPC分类号： H01L27/14806

    摘要： In a solid-state imaging device, a plurality of vertical charge transfer paths is arranged at a horizontal pitch A within a photoelectric conversion region, and at a pitch B that is smaller than the pitch A in a portion where the signals are input into the horizontal charger transfer path. A read-out amplifier and a horizontal charge transfer path for receiving signals from vertical charge transfer paths are provided for each photoelectric conversion block into which the photoelectric conversion region has been partitioned. The read-out amplifiers have the same shape and their positional relation is one of parallel displacement in regions that are obtained by changing the pitch of the vertical charge transfer portions. Thus, a solid-state imaging device is achieved that is not so easily influenced by mask misalignments or skewed ion implantation angles, and in which signal read-out at high speeds is possible.

    摘要翻译： 在固态成像装置中，在光电转换区域内以水平间距A布置多个垂直电荷传输路径，并且在信号被输入到该部分的部分中以比间距A小的间距B 水平充电器传输路径。 为光电转换区域分割成的每个光电转换块提供读出放大器和用于从垂直电荷传输路径接收信号的水平电荷传输路径。 读出放大器具有相同的形状，并且它们的位置关系是通过改变垂直电荷转移部分的间距而获得的区域中的平行位移之一。 因此，实现了不容易受到掩模未对准或偏斜离子注入角度的影响的固态成像装置，并且其中以高速度读出信号是可能的。

    Method for manufacturing solid-state imaging device
    6.
    发明授权
    Method for manufacturing solid-state imaging device 失效

    公开(公告)号：US06498103B2

    公开(公告)日：2002-12-24

    申请号：US09903411

    申请日：2001-07-11

    申请人： Rieko Nishio ,  Takumi Yamaguchi ,  Toshihiro Kuriyama ,  Hiroyuki Senda

    发明人： Rieko Nishio ,  Takumi Yamaguchi ,  Toshihiro Kuriyama ,  Hiroyuki Senda

    IPC分类号： H01L21311

    CPC分类号： H01L27/14692

    摘要： A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

    Solid-state image sensor and manufacturing method thereof
    7.
    发明授权
    Solid-state image sensor and manufacturing method thereof 有权
    固态图像传感器及其制造方法

    公开(公告)号：US07968888B2

    公开(公告)日：2011-06-28

    申请号：US11422708

    申请日：2006-06-07

    申请人： Takumi Yamaguchi ,  Takahiko Murata ,  Shigetaka Kasuga

    发明人： Takumi Yamaguchi ,  Takahiko Murata ,  Shigetaka Kasuga

    IPC分类号： H01L31/00

    CPC分类号： H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

    摘要： An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.

    摘要翻译： 本发明的目的是提供一种实现敏感度显着提高的小型固态图像传感器。 本发明的固态图像传感器包括形成有光电转换单元的半导体衬底，形成在半导体衬底之上并具有形成为位于各个光电转换单元之上的孔的遮光膜，以及 形成在孔中的高折射率层。 这里，每个孔径在从通过孔进入光电转换单元的光的波长转换的真空中的光波长中的最大波长较小，高折射率由高折射率材料 具有折射率，其允许通过孔径传输具有最大波长的光。

    SOLID STATE IMAGING DEVICE AND CAMERA
    8.
    发明申请
    SOLID STATE IMAGING DEVICE AND CAMERA 审中-公开
    固态成像装置和摄像机

    公开(公告)号：US20090225204A1

    公开(公告)日：2009-09-10

    申请号：US12096952

    申请日：2006-06-27

    申请人： Yuuichi Inaba ,  Takumi Yamaguchi ,  Yoshiyuki Matsunaga

    发明人： Yuuichi Inaba ,  Takumi Yamaguchi ,  Yoshiyuki Matsunaga

    IPC分类号： H04N5/335

    CPC分类号： G02B5/28 ,  G02B3/0043 ,  G02B5/201 ,  G02B5/282 ,  H01L27/14621 ,  H01L27/14627

    摘要： A wavelength separation filter 206 is composed of λ/4 multilayer films 302 to 304 that are sequentially laminated on a multilayer interference filter 301. The multilayer interference filter 301 is composed of two λ/4 multilayer films with a dielectric layer sandwiched therebetween. Also, the multilayer interference filter 301 is composed of parts 301B, 301G, 301R that transmit blue light, green light, and red light, respectively. The multilayer interference filter 301 wavelength-separates visible light. The λ/4 multilayer films 302 to 304 reflect light having a wavelength within wavelength ranges having set-wavelengths of 800 nm, 900 nm, and 1000 nm respectively. In other words, the λ/4 multilayer films 302 to 304 reflect near infrared light.

    摘要翻译： 波长分离滤光器206由依次层叠在多层干涉滤光器301上的λ/ 4多层膜302〜304构成。多层干涉滤光器301由夹在其间的电介质层的两个λ/ 4多层膜构成。 此外，多层干涉滤光器301分别由透射蓝光，绿光和红光的部分301B，301G，301R组成。 多层干涉滤光器301对可见光进行波长分离。 λ/ 4多层膜302至304分别反射具有波长范围为800nm，900nm和1000nm的波长范围内的波长的光。 换句话说，λ/ 4多层膜302至304反射近红外光。

    Method for fabricating condenser microphone and condenser microphone
    9.
    发明授权
    Method for fabricating condenser microphone and condenser microphone 有权
    制造电容式麦克风和电容麦克风的方法

    公开(公告)号：US07569906B2

    公开(公告)日：2009-08-04

    申请号：US11702531

    申请日：2007-02-06

    申请人： Mitsuyoshi Mori ,  Keisuke Tanaka ,  Takumi Yamaguchi ,  Takuma Katayama

    发明人： Mitsuyoshi Mori ,  Keisuke Tanaka ,  Takumi Yamaguchi ,  Takuma Katayama

    IPC分类号： H01L29/00 ,  H01L29/84

    CPC分类号： H04R19/04 ,  H01L25/162 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

    摘要翻译： 第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。 第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。 第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。 在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。

    SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME
    10.
    发明申请
    SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME 有权
    固态成像装置及其制造方法

    公开(公告)号：US20090014759A1

    公开(公告)日：2009-01-15

    申请号：US12233080

    申请日：2008-09-18

    申请人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

    发明人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

    摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。