摘要:
The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
摘要:
The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
摘要:
In a MOS type sensor including a floating diffusion (FD) amplifier in each pixel, the number of pulse lines is reduced, so as to improve the numerical aperture. For this purpose, a read pulse for a read transistor of a first pixel and a reset pulse for a reset transistor of a second pixel adjacent to the first pixel in a column direction are supplied through a common gate line; a LOW level potential of a drain line connected to a drain region (a region for supplying a pulse voltage to an FD portion through the reset transistor) of the first pixel is set to a potential higher than a potential depth of a photodiode of the first pixel in resetting the second pixel; and potential below the gate of the reset transistor of the first pixel obtained by applying a LOW level voltage to this gate is set to a potential higher than the LOW level potential of the drain line.
摘要:
The consumed power of a MOS type sensor including a floating diffusion (FD) amplifier in each pixel is reduced. For this purpose, drain regions (regions for supplying a pulse voltage to FD portions through reset transistors) of unit pixels are connected to different drain lines row by row, so as to selectively supply a power pulse to each row. The power pulse is set to a HIGH level potential at least during a period when signal charge stored in the FD portion is reset and a period when the signal charge stored in the FD portion is detected.
摘要:
In a solid-state imaging device, a plurality of vertical charge transfer paths is arranged at a horizontal pitch A within a photoelectric conversion region, and at a pitch B that is smaller than the pitch A in a portion where the signals are input into the horizontal charger transfer path. A read-out amplifier and a horizontal charge transfer path for receiving signals from vertical charge transfer paths are provided for each photoelectric conversion block into which the photoelectric conversion region has been partitioned. The read-out amplifiers have the same shape and their positional relation is one of parallel displacement in regions that are obtained by changing the pitch of the vertical charge transfer portions. Thus, a solid-state imaging device is achieved that is not so easily influenced by mask misalignments or skewed ion implantation angles, and in which signal read-out at high speeds is possible.
摘要:
A photoelectric transducer provided with a first photoelectric converting section for generating an electric charge according to incident light, an accumulating section for accumulating the electric charge generated by the first photoelectric converting section, an amplifying section for amplifying the electric charge outputted from the accumulating section with a prescribed gain, and a storage section for memorizing signal charges amplified by the amplifying section, characterized in that the prescribed gain in the amplifying section is altered in 1 field/1 frame period on the basis of the number of electric charges accumulated in the accumulating section during a prescribed period before the application of the gain.
摘要:
A solid state imaging device has: a first polysilicon layer 901; a second polysilicon layer 902; a photoelectric converting portion or PD 903; a read gate 904; a read channel 905 (in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer 906 which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer 907 which defines the transfer channel region of a VCCD; and a VCCD 908 which transfers a signal charge in the direction of the arrows. A unit pixel 900 is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V1 911, a driving pulse &phgr;V2 912, a driving pulse &phgr;V3 913, a driving pulse &phgr;V4 914, a driving pulse &phgr;V5 915, a driving pulse &phgr;V6 916, a driving pulse &phgr;V7 917, and a driving pulse &phgr;V8 918.
摘要:
To present a holonic rhythm generator capable of generating rhythm following free changes by transmitting the intent of tempo change from the action of man to rhythm generator in real time, or, to the contrary, guiding the action rhythm of man gradually by the rhythm generator. To achieve the object, the device has a rhythm generator having such constitution described by a nonlinear vibration equation which is a van der Pol's formula a constant portion of which is replaced by a cubic expression, and a fixed rhythm generator and action rhythm detector for generating an input signal of the rhythm generator, in which a specific relation is given between the fixed rhythm generator and action rhythm detector.
摘要翻译:通过将节奏变化的意图从人的动作实时传递到节奏发生器,呈现出能够通过自由变化产生节奏的全能节奏发生器,或者相反,由节奏发生器逐渐引导人的动作节奏。 为了实现该目的,该装置具有节奏发生器,其具有由非线性振动方程描述的结构,该非线性振动方程是van der Pol的公式,其恒定部分被立方体表示所代替,并且具有固定节律发生器和动作节律检测器,用于产生 节奏发生器的输入信号,其中在固定节奏发生器和动作节奏检测器之间给出特定关系。
摘要:
An imaging and processing device includes: an optical element; a single imager with a color filter array of a plurality of colors attached thereto for outputting a value according to an amount of light which has been guided by the optical element and transmitted through the color filter array, thereby enabling to obtain separate images of the plurality of colors for every frame time point; a first adder section for adding together values, associated with a first color of the plurality of colors, of different images obtained over a plurality of frame time points; a second adder section for adding together a plurality of values, associated with a second color of the plurality of colors other than the first color, of an image captured at a single frame time point; and an image restoring section for restoring an image including a plurality of colors at each frame time point from an image based on the first color which has been subjected to the addition by the first adder section, and an image based on the second color which has been subjected to the addition by the second adder section.
摘要:
An image feature analyzing section performs an image feature analysis with respect to an input image to output an image feature vector. A parameter output section stores a plurality of image feature vectors and a plurality of parameters corresponding to the respective image feature vectors and outputs an original parameter value corresponding to an image feature vector. A parameter operation setting section determines contents of an operation of an illumination equation parameter, depending on a prescribed image conversion. A parameter operating section operates the original parameter value in accordance with a prescription of the parameter operation setting section, to obtain a new parameter value. An image generating section generates an output image based on the new parameter value.