发明授权
US06620724B1 Low resistivity deep trench fill for DRAM and EDRAM applications
有权
用于DRAM和EDRAM应用的低电阻深沟槽填充
- 专利标题： Low resistivity deep trench fill for DRAM and EDRAM applications
- 专利标题（中）： 用于DRAM和EDRAM应用的低电阻深沟槽填充
-
申请号： US10142518申请日： 2002-05-09
-
公开(公告)号： US06620724B1公开(公告)日： 2003-09-16
- 发明人: Uwe Schroeder , Helmut Horst Tews , Irene McStay , Manfred Hauf , Matthias Goldbach , Bernhard Sell , Harald Seidl , Dirk Schumann , Rajarao Jammy , Joseph F. Shepard, Jr. , Jean-Marc Rousseau
- 申请人： Uwe Schroeder , Helmut Horst Tews , Irene McStay , Manfred Hauf , Matthias Goldbach , Bernhard Sell , Harald Seidl , Dirk Schumann , Rajarao Jammy , Joseph F. Shepard, Jr. , Jean-Marc Rousseau
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
Semiconductor devices having deep trenches with fill material therein having low resistivity are provided along with methods of fabricating such semiconductor devices.