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    Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability
    2.
    发明授权
    Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability 有权
    用于可调蚀刻选择性和增强的透氢性的可变化学计量氮化硅阻挡膜

    公开(公告)号：US06268299B1

    公开(公告)日：2001-07-31

    申请号：US09668988

    申请日：2000-09-25

    申请人： Rajarao Jammy ,  Johnathan E. Faltermeier ,  Keitaro Imai ,  Ryota Katsumata ,  Jean-Marc Rousseau ,  Viraj Y. Sardesai ,  Joseph F. Shepard, Jr.

    发明人： Rajarao Jammy ,  Johnathan E. Faltermeier ,  Keitaro Imai ,  Ryota Katsumata ,  Jean-Marc Rousseau ,  Viraj Y. Sardesai ,  Joseph F. Shepard, Jr.

    IPC分类号： H01L21318

    CPC分类号： C23C14/0652 ,  H01L21/3185

    摘要： A low-temperature process for forming a highly conformal barrier film during integrated circuit manufacture by low pressure chemical vapor deposition (LPCVD). The process includes the following steps. First, the process provides ammonia and a silicon-containing gas selected from the group consisting of silane, dichlorosilane, bistertiarybutylaminosilanc, hexachlorodisilane, and mixtures of those compositions. The ratio of the volume of ammonia to the volume of the silicon-containing gas is adjusted to yield silicon concentrations greater than 43 atomic percent in the resultant film. The process applies a deposition temperature of 550° C. to 720° C. The ammonia and the silicon-containing gas are reacted at the deposition temperature to form a silicon-rich nitride film less than 200 Å thick. Finally, the silicon nitride film is deposited by low pressure chemical vapor deposition.

    摘要翻译： 在低压化学气相沉积（LPCVD）的集成电路制造过程中形成高保形阻挡膜的低温工艺。 该过程包括以下步骤。 首先，该方法提供氨和含硅气体，其选自硅烷，二氯硅烷，二丁基氨基硅烷，六氯二硅烷，以及这些组合物的混合物。 调节氨体积与含硅气体体积的比例，得到所得膜中硅浓度大于43原子百分比。 该方法将沉积温度为550℃至720℃。氨和含硅气体在沉积温度下反应，形成厚度小于200埃的富硅氮化物膜。 最后，通过低压化学气相沉积沉积氮化硅膜。

    Doped structures containing diffusion barriers
    3.
    发明授权
    Doped structures containing diffusion barriers 失效
    含有扩散阻挡层的掺杂结构

    公开(公告)号：US06399434B1

    公开(公告)日：2002-06-04

    申请号：US09559880

    申请日：2000-04-26

    申请人： Susan E. Chaloux ,  Johnathan E. Faltermeier ,  Ulrike Gruening ,  Rajarao Jammy ,  Christopher C. Parks ,  Paul Parries ,  Paul A. Ronsheim ,  Jean-Marc Rousseau

    发明人： Susan E. Chaloux ,  Johnathan E. Faltermeier ,  Ulrike Gruening ,  Rajarao Jammy ,  Christopher C. Parks ,  Paul Parries ,  Paul A. Ronsheim ,  Jean-Marc Rousseau

    IPC分类号： H01L218242

    CPC分类号： H01L27/10867 ,  H01L21/28512

    摘要： Semiconductor structures having improved dopant configurations are obtained by use of barrier layers containing silicon, nitrogen, and oxygen atoms and having a thickness of about 5 to 50 Å. A doped semiconductor structure with controlled dopant configuration can be formed by: (a) providing a first semiconductor material region, (b) forming an interface layer comprising silicon, oxygen, and nitrogen on the first region, (c) forming a second semiconductor material region on the interface layer, the second semiconductor material region being on an opposite side of the interface layer from the first semiconductor material region, (d) providing a dopant in the second region, and (e) heating the first and second regions whereby at least a portion of the dopant diffuses from the second region through the interface layer to the first region.

    摘要翻译： 具有改进的掺杂剂构型的半导体结构通过使用包含硅，氮和氧原子并且具有约5至约50埃的厚度的阻挡层来获得。 具有受控掺杂剂配置的掺杂半导体结构可以通过以下方式形成：（a）提供第一半导体材料区域，（b）在第一区域上形成包含硅，氧和氮的界面层，（c）形成第二半导体材料 区域，所述第二半导体材料区域在与所述第一半导体材料区域的所述界面层的相对侧上，（d）在所述第二区域中提供掺杂剂，以及（e）加热所述第一区域和所述第二区域， 掺杂剂的至少一部分从第二区域扩散通过界面层到第一区域。

    Simulation of medical imaging
    5.
    发明授权
    Simulation of medical imaging 有权
    医学影像模拟

    公开(公告)号：US09020217B2

    公开(公告)日：2015-04-28

    申请号：US13120936

    申请日：2009-09-24

    申请人： Robert Amyot ,  Sebastien Nadeau ,  Stephane Pilette ,  Jean-Marc Rousseau ,  Yanick Beaulieu

    发明人： Robert Amyot ,  Sebastien Nadeau ,  Stephane Pilette ,  Jean-Marc Rousseau ,  Yanick Beaulieu

    IPC分类号： G06K9/00 ,  G06T19/00 ,  G09B23/28

    CPC分类号： G06T19/00 ,  A61B8/4245 ,  A61B8/4254 ,  G06F19/00 ,  G06T2210/41 ,  G09B23/286

    摘要： There is described a method for simulating an imaging process for an organ, the method comprising: retrieving from a memory a 3D volume model of the organ, the 3D volume model describing a 3D structure of the organ and a distribution of density within the 3D structure, the 3D structure representing a surface and internal features of the organ; generating a slice of the 3D model according to a position and an orientation of an imaging device, the slice including a cross-section of the surface and the internal features; rendering an image in accordance with the slice; and displaying the image.

    摘要翻译： 描述了一种用于模拟器官的成像过程的方法，该方法包括：从存储器检索器官的3D体积模型，描述器官的3D结构的3D体积模型和3D结构内的密度分布 ，3D结构表示器官的表面和内部特征; 根据成像装置的位置和取向产生3D模型的切片，所述切片包括所述表面的横截面和所述内部特征; 根据切片渲染图像; 并显示图像。

    Simulation of Medical Imaging
    6.
    发明申请
    Simulation of Medical Imaging 有权
    医学影像模拟

    公开(公告)号：US20120128218A1

    公开(公告)日：2012-05-24

    申请号：US13120936

    申请日：2009-09-24

    申请人： Robert Amyot ,  Sebastien Nadeau ,  Stephane Pilette ,  Jean-Marc Rousseau ,  Yanick Beaulieu

    发明人： Robert Amyot ,  Sebastien Nadeau ,  Stephane Pilette ,  Jean-Marc Rousseau ,  Yanick Beaulieu

    IPC分类号： G06K9/00

    CPC分类号： G06T19/00 ,  A61B8/4245 ,  A61B8/4254 ,  G06F19/00 ,  G06T2210/41 ,  G09B23/286

    摘要： There is described a method for simulating an imaging process for an organ, the method comprising: retrieving from a memory a 3D volume model of the organ, the 3D volume model describing a 3D structure of the organ and a distribution of density within the 3D structure, the 3D structure representing a surface and internal features of the organ; generating a slice of the 3D model according to a position and an orientation of an imaging device, the slice including a cross-section of the surface and the internal features; rendering an image in accordance with the slice; and displaying the image.

    摘要翻译： 描述了一种用于模拟器官的成像过程的方法，该方法包括：从存储器检索器官的3D体积模型，描述器官的3D结构的3D体积模型和3D结构内的密度分布 ，3D结构表示器官的表面和内部特征; 根据成像装置的位置和取向产生3D模型的切片，所述切片包括所述表面的横截面和所述内部特征; 根据切片渲染图像; 并显示图像。

    Multilayered quantum conducting barrier structures
    7.
    发明授权
    Multilayered quantum conducting barrier structures 失效
    多层量子导电阻挡结构

    公开(公告)号：US06344673B1

    公开(公告)日：2002-02-05

    申请号：US09607214

    申请日：2000-06-30

    申请人： Caroline Aussilhou ,  Corinne Buchet ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

    发明人： Caroline Aussilhou ,  Corinne Buchet ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

    IPC分类号： H01L27108

    CPC分类号： H01L27/10867 ,  H01L29/88

    摘要： A multilayered quantum conducting barrier (MQCB) structure formed on two semiconductor regions having a different crystalline nature and a thin layer of an insulating material sandwiched between said semiconductor regions. An undoped amorphous silicon layer continuously coats these two semiconductor regions and insulating layer. The surface of the undoped amorphous silicon layer is nitridized to produce a superficial film of a nitride based material to form the desired quantum conducting barrier (QCB). A stack consisting of at least one dual layer comprised of a bottom undoped amorphous silicon layer and a top dopant monolayer is formed on said undoped amorphous silicon layer. After thermal processing, the MQCB structure operates as a strap allowing an electrical continuity between these semiconductor regions through the QCB by a quantum mechanical effect.

    摘要翻译： 形成在具有不同晶体性质的两个半导体区域上的多层量子导电屏障（MQCB）结构和夹在所述半导体区域之间的绝缘材料的薄层。 未掺杂的非晶硅层连续地涂覆这两个半导体区域和绝缘层。 将未掺杂的非晶硅层的表面氮化以产生氮化物基材料的表面膜以形成所需的量子传导屏障（QCB）。 在所述未掺杂非晶硅层上形成由至少一个由底部未掺杂非晶硅层和顶部掺杂剂单层组成的双层组成的叠层。 在热处理之后，MQCB结构作为带通过量子力学效应通过QCB在这些半导体区域之间进行电连续性操作。

    Methods of forming the buried strap and its quantum barrier in deep trench cell capacitors
    8.
    发明授权
    Methods of forming the buried strap and its quantum barrier in deep trench cell capacitors 失效
    在深沟槽电容器中形成掩埋带及其量子势垒的方法

    公开(公告)号：US06344390B1

    公开(公告)日：2002-02-05

    申请号：US09607217

    申请日：2000-06-30

    申请人： Mathias Bostelmann ,  Corine Bucher ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

    发明人： Mathias Bostelmann ,  Corine Bucher ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

    IPC分类号： H01L218242

    CPC分类号： H01L27/10867

    摘要： There is disclosed a method of forming a buried strap (BS) and its quantum conducting barrier (QCB) in a structure wherein a doped polycrystalline silicon region is exposed at the bottom of a recess and separated from a monocrystalline region of a silicon substrate by a region of an insulating material. First, a thin continuous layer of undoped amorphous silicon is deposited by LPCVD to coat said regions. The surface of this layer is nitridized to produce a Si3N4 QCB film. Now, at least one dual layer comprised of an undoped amorphous silicon layer and a dopant monolayer is deposited onto the structure by LPCVD. The recess is filled with undoped amorphous silicon to terminate the buried strap and its QCB. Finally, the structure is heated to activate the dopants in the buried strap to allow an electrical continuity between said polycrystalline and monocrystalline regions through the QCB by a quantum mechanical effect. All these steps are performed in situ in the same LPCVD tool.

    摘要翻译： 公开了一种在其中掺杂多晶硅区域暴露在凹陷的底部并与硅衬底的单晶区域分离的结构中的掩埋带（BS）及其量子传导屏障（QCB）的形成方法， 绝缘材料的区域。 首先，通过LPCVD沉积薄层的未掺杂非晶硅，以涂覆所述区域。 将该层的表面氮化以产生Si 3 N 4 QCB膜。 现在，通过LPCVD将至少一个由未掺杂的非晶硅层和掺杂剂单层组成的双层沉积到该结构上。 凹槽填充有未掺杂的非晶硅，以终止埋管带及其QCB。 最后，将结构加热以激活埋入带中的掺杂剂，以通过量子力学效应通过QCB在所述多晶和单晶区域之间实现电连续性。 所有这些步骤在相同的LPCVD工具中原位进行。