Invention Grant
US06620724B1 Low resistivity deep trench fill for DRAM and EDRAM applications
有权
用于DRAM和EDRAM应用的低电阻深沟槽填充
- Patent Title: Low resistivity deep trench fill for DRAM and EDRAM applications
- Patent Title (中): 用于DRAM和EDRAM应用的低电阻深沟槽填充
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Application No.: US10142518Application Date: 2002-05-09
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Publication No.: US06620724B1Publication Date: 2003-09-16
- Inventor: Uwe Schroeder , Helmut Horst Tews , Irene McStay , Manfred Hauf , Matthias Goldbach , Bernhard Sell , Harald Seidl , Dirk Schumann , Rajarao Jammy , Joseph F. Shepard, Jr. , Jean-Marc Rousseau
- Applicant: Uwe Schroeder , Helmut Horst Tews , Irene McStay , Manfred Hauf , Matthias Goldbach , Bernhard Sell , Harald Seidl , Dirk Schumann , Rajarao Jammy , Joseph F. Shepard, Jr. , Jean-Marc Rousseau
- Main IPC: H01L214763
- IPC: H01L214763
Abstract:
Semiconductor devices having deep trenches with fill material therein having low resistivity are provided along with methods of fabricating such semiconductor devices.
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