发明授权
US06662432B2 Method of making a free layer for a spin valve sensor with a lower uniaxial anisotropy field
失效
制备具有较低单轴各向异性场的自旋阀传感器自由层的方法
- 专利标题： Method of making a free layer for a spin valve sensor with a lower uniaxial anisotropy field
- 专利标题（中）： 制备具有较低单轴各向异性场的自旋阀传感器自由层的方法
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申请号： US09753823申请日： 2001-01-02
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公开(公告)号： US06662432B2公开(公告)日： 2003-12-16
- 发明人: Hamid Balamane , Dwight Cornwell, Jr. , Hardayal Singh Gill , Serhat Metin , Mustafa Pinarbasi
- 申请人： Hamid Balamane , Dwight Cornwell, Jr. , Hardayal Singh Gill , Serhat Metin , Mustafa Pinarbasi
- 主分类号： G11B5127
- IPC分类号： G11B5127
摘要：
A free layer for a spin valve sensor includes a cobalt iron (CoFe) film which has an easy axis oriented perpendicular to an air bearing surface (ABS) of a read head and a nickel iron (NiFe) film which has an easy axis oriented parallel to the ABS and parallel to the major planes of the thin film layers. In a further embodiment the free layer is annealed at a high temperature in the presence of a field which is oriented perpendicular to the ABS.
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