Invention Grant
US06797633B2 In-situ plasma ash/treatment after via etch of low-k films for poison-free dual damascene trench patterning
有权
原位等离子体灰/通过蚀刻低k膜后的无毒双镶嵌沟槽图案处理
- Patent Title: In-situ plasma ash/treatment after via etch of low-k films for poison-free dual damascene trench patterning
- Patent Title (中): 原位等离子体灰/通过蚀刻低k膜后的无毒双镶嵌沟槽图案处理
-
Application No.: US09966605Application Date: 2001-09-28
-
Publication No.: US06797633B2Publication Date: 2004-09-28
- Inventor: Ping Jiang , Robert Kraft , Kenneth J. Newton , Daty M. Rogers
- Applicant: Ping Jiang , Robert Kraft , Kenneth J. Newton , Daty M. Rogers
- Main IPC: H01L21302
- IPC: H01L21302
Abstract:
After via etch, a low-k dielectric layer (104) is treated with an in-situ O2 plasma. Resist poisoning is caused by a N source that causes an interaction between low-k films (104), such as OSG, and DUV resist (130, 132). The in-situ plasma treatment immediately removes the source of poisoning to reduce or eliminate poisoning at trench patterning.
Public/Granted literature
Information query
