Invention Grant
- Patent Title: Ferroelectric composite material, method of making same and memory utilizing same
- Patent Title (中): 铁电复合材料,制造方法和利用其的记忆
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Application No.: US10332481Application Date: 2003-07-22
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Publication No.: US06831313B2Publication Date: 2004-12-14
- Inventor: Kiyoshi Uchiyama , Carlos A. Paz de Araujo , Vikram Joshi , Narayan Solayappan , Jolanta Celinska , Larry D. McMillan
- Applicant: Kiyoshi Uchiyama , Carlos A. Paz de Araujo , Vikram Joshi , Narayan Solayappan , Jolanta Celinska , Larry D. McMillan
- Main IPC: H01L2972
- IPC: H01L2972

Abstract:
A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.
Public/Granted literature
- US20040129987A1 Ferroelectric composite material, method of making same and memory utilizing same Public/Granted day:2004-07-08
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