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US06831313B2 Ferroelectric composite material, method of making same and memory utilizing same 失效
铁电复合材料,制造方法和利用其的记忆

Ferroelectric composite material, method of making same and memory utilizing same
Abstract:
A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.
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