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    Pyroelectric sensor
    2.
    发明申请
    Pyroelectric sensor 有权
    热电传感器

    公开(公告)号：US20070108385A1

    公开(公告)日：2007-05-17

    申请号：US10546613

    申请日：2004-02-20

    申请人： Joseph Mantese ,  Norman Schubring ,  Adolph Micheli ,  Carlos De Araujo ,  Larry McMillan ,  Jolanta Celinska

    发明人： Joseph Mantese ,  Norman Schubring ,  Adolph Micheli ,  Carlos De Araujo ,  Larry McMillan ,  Jolanta Celinska

    IPC分类号： G01J5/00

    CPC分类号： G01J5/34

    摘要： A ferroelectric/pyroelectric sensor employs a technique for determining a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry, such as a combination output capacitor and operational amplifier, is employed to measure the charge from the scene element. Preferably, the ferroelectric of the scene element is made of an economical and responsive strontium bismuth tantalate, SBT, or derivative thereof, disposed directly between top and bottom electrodes. Because of the frequency characteristics of the sensor, created by the external AC signal, the element need not be thermally isolated from the silicon substrate by a traditional air bridge, which is difficult to manufacture, and instead is preferably thermally isolated by spin-on-glass, SOG. To prevent saturation of an output signal voltage of the sensor by excessive charge accumulation in an output capacitor, the sensor preferably has a reference element configured electrically in parallel with the scene element. When the voltage of the AC signal is negative the output capacitor is discharged by flowing current through the reference element thus interrogating the polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.

    摘要翻译： 铁电/热电传感器采用用于通过在相同温度的特定时间段内多次测量场景元件的磁滞回线输出来确定传感器的铁电场景元件的电荷输出的技术。 外部交流信号被施加到铁电场景元件以使得从元件输出的磁滞回线转换偏振。 采用诸如组合输出电容器和运算放大器的电荷积分电路来测量场景元件中的电荷。 优选地，场景元件的铁电体由直接设置在顶部和底部电极之间的经济且响应的钽酸铋铋钡，或其衍生物制成。 由于由外部AC信号产生的传感器的频率特性，该元件不需要通过难以制造的传统空气桥与硅衬底热隔离，而是优选地通过旋转隔离热隔离， 玻璃，SOG。 为了通过输出电容器中的过度电荷积累来防止传感器的输出信号电压的饱和，传感器优选地具有与场景元件电并联配置的参考元件。 当AC信号的电压为负时，输出电容器通过流过参考元件的电流而被放电，从而询问参考元件的偏振，该参考元件的偏振与每个周期的场景元素的偏振相比较和减去。 在设定的时间周期内对每个周期测量的偏振差由积分放大器相加以产生信号输出电压。

    Metal organic precursors for transparent metal oxide thin films and method of making same
    3.
    发明授权
    Metal organic precursors for transparent metal oxide thin films and method of making same 失效
    透明金属氧化物薄膜的金属有机前体及其制备方法

    公开(公告)号：US06686489B2

    公开(公告)日：2004-02-03

    申请号：US10037877

    申请日：2001-11-09

    申请人： Jolanta Celinska ,  Carlos A. Paz de Araujo ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan

    发明人： Jolanta Celinska ,  Carlos A. Paz de Araujo ,  Joseph D. Cuchiaro ,  Jeffrey W. Bacon ,  Larry D. McMillan

    IPC分类号： C07F1900

    CPC分类号： C07C53/126

    摘要： A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor. In a second embodiment, a liquid precursor for forming a transparent metal oxide nonconductive thin film comprises an organic precursor compound containing a metal from the group including cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, niobium, tantalum, and bismuth. Liquid precursors of the invention preferably comprise a metal organic precursor compound, such as an ethylhexanoate, an octanoate, or a neodecanoate, dissolved in a solvent, such as xylenes, n-octane and n-butyl acetate.

    摘要翻译： 用于形成透明金属氧化物薄膜的液体前体包括第一有机前体化合物。 在一个实施例中，液体前体用于制造导电薄膜。 在该实施方案中，液体前体含有溶解在有机溶剂中的包含锡，锑和铟的第一金属。 液体前体优选包含含有来自相同基团的第二金属的第二有机前体化合物。 此外，液体前体优选包含含有选自铌，钽，铋，铈，钇，钛，锆，铪，硅，铝，锌和镁的金属的有机掺杂剂前体化合物。 含有多种金属的液体前体具有更长的保质期。 向液体前体中添加含有诸如铌，钽或铋的金属的有机掺杂剂前体化合物增强了所得到的透明导体的导电性的控制。 在第二实施方案中，用于形成透明金属氧化物非导电薄膜的液体前体包括含有包括铈，钇，钛，锆，铪，硅，铝，铌，钽和铋的金属的有机前体化合物。 本发明的液体前体优选包含溶解在溶剂例如二甲苯，正辛烷和乙酸正丁酯中的金属有机前体化合物，例如乙基己酸酯，辛酸酯或新癸酸酯。

    Liquid precursors for aluminum oxide and method making same
    6.
    发明授权
    Liquid precursors for aluminum oxide and method making same 失效
    氧化铝液体前体及其制备方法

    公开(公告)号：US06495709B1

    公开(公告)日：2002-12-17

    申请号：US09526786

    申请日：2000-03-16

    申请人： Jolanta Celinska ,  Jeffrey W. Bacon ,  Akihiro Matsuda ,  Carlos A. Paz de Araujo

    发明人： Jolanta Celinska ,  Jeffrey W. Bacon ,  Akihiro Matsuda ,  Carlos A. Paz de Araujo

    IPC分类号： C07F506

    CPC分类号： C23C30/00 ,  C03C17/25 ,  C03C2217/214 ,  C03C2218/113 ,  C07C51/412 ,  C07C53/128

    摘要： A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.

    摘要翻译： 用于形成氧化铝膜的前体包括铝有机前体化合物在有机溶剂中的液体溶液。 在第二个实施方案中，前体包含氧化铝粉末在铝有机前体化合物的溶液中的悬浮液。 根据本发明的前体通过浸渍，轧制，喷涂，雾化沉积，沉积或化学气相沉积沉积在基底上，然后加热以制造透明氧化铝膜。 可以通过沉积多层前体并在层间退火前体来改善氧化铝膜的电子性能。

    Barrier layers for protecting metal oxides from hydrogen degradation
    9.
    发明授权
    Barrier layers for protecting metal oxides from hydrogen degradation 有权
    用于保护金属氧化物免受氢降解的阻挡层

    公开(公告)号：US06781184B2

    公开(公告)日：2004-08-24

    申请号：US09998469

    申请日：2001-11-29

    申请人： Narayan Solayappan ,  Jolanta Celinska ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

    发明人： Narayan Solayappan ,  Jolanta Celinska ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

    IPC分类号： H01L27108

    CPC分类号： H01L28/57 ,  H01L23/642 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

    摘要翻译： 集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。 氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。 氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。 在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。