发明授权
US06853030B2 Semiconductor device including multiple field effect transistors, with first FETs having oxide spacers and the second FETs having oxide nitride oxidation protection
失效
包括多个场效应晶体管的半导体器件，其中具有氧化物间隔物的第一FET和具有氧化物氮氧化保护的第二FET
- 专利标题： Semiconductor device including multiple field effect transistors, with first FETs having oxide spacers and the second FETs having oxide nitride oxidation protection
- 专利标题（中）： 包括多个场效应晶体管的半导体器件，其中具有氧化物间隔物的第一FET和具有氧化物氮氧化保护的第二FET
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申请号： US10370762申请日： 2003-02-24
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公开(公告)号： US06853030B2公开(公告)日： 2005-02-08
- 发明人: Kenji Yoshiyama , Motoshige Igarashi , Keiichi Yamada , Katsuya Okada , Keiichi Higashitani
- 申请人： Kenji Yoshiyama , Motoshige Igarashi , Keiichi Yamada , Katsuya Okada , Keiichi Higashitani
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP9-150942 19970609; JP9-244245 19970909
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/28 ; H01L21/8234 ; H01L27/088 ; H01L29/78 ; H01L29/788 ; H01L27/01 ; H01L27/12 ; H01L29/76 ; H01L29/94
摘要：
A semiconductor device and a manufacturing method thereof permitting the quality of gate insulating films to be prevented from deteriorating and thereby permitting electrical characteristics of the device to be prevented from deteriorating are provided. In a semiconductor device including a plurality of field effect transistors, an oxidation protection film 21 is formed on a side of one gate electrode 19.