Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers

发明授权

US06858906B2 Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers 有权

标题翻译：浮置阱非易失性半导体存储器件包括高介电常数阻挡绝缘层

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专利标题： Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers
专利标题（中）： 浮置阱非易失性半导体存储器件包括高介电常数阻挡绝缘层
申请号： US10184328

申请日： 2002-06-27
公开(公告)号： US06858906B2

公开(公告)日： 2005-02-22
发明人: Chang-Hyun Lee , Jung-Dal Choi , Byoung-Woo Ye
申请人： Chang-Hyun Lee , Jung-Dal Choi , Byoung-Woo Ye
申请人地址： KR
专利权人： Samsung Electronics Co., Ltd.
当前专利权人： Samsung Electronics Co., Ltd.
当前专利权人地址： KR
代理机构： Myers Bigel Sibley & Sajovec, P.A.
优先权： KR2001-37421 20010628; KR2002-5622 20020131
主分类号： H01L21/8247
IPC分类号： H01L21/8247 ; G11C11/34 ; H01L21/28 ; H01L21/336 ; H01L21/8246 ; H01L27/115 ; H01L29/423 ; H01L29/51 ; H01L29/76 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L31/0328

Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers

摘要：

Floating trap non-volatile memory devices and methods are provided. The memory devices include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the gate electrode may be a tunneling insulating layer having a first dielectric constant, a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant, and a charge storage layer.

摘要（中）：

提供浮动阱非易失性存储器件和方法。存储器件包括半导体衬底和相邻的栅电极。在基板和栅电极之间可以是具有第一介电常数的隧道绝缘层，具有大于第一介电常数的第二介电常数的阻挡绝缘层和电荷存储层。

公开/授权文献

US20030047755A1 Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers and methods 公开/授权日：2003-03-13

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