发明授权
- 专利标题： Method for fabricating a trench structure
- 专利标题（中）： 沟槽结构的制造方法
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申请号： US10233969申请日： 2002-09-03
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公开(公告)号： US06861312B2公开(公告)日： 2005-03-01
- 发明人: Albert Birner , Matthias Goldbach , Joern Luetzen
- 申请人： Albert Birner , Matthias Goldbach , Joern Luetzen
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理商 Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- 优先权： DE10142591 20010831
- 主分类号： H01L21/334
- IPC分类号： H01L21/334 ; H01L21/762 ; H01L21/763 ; H01L21/8242
摘要：
An insulation region, for example, an oxide collar, is formed in a trench structure for a DRAM by first widening a first trench region of the trench that is to be formed, in particular, a base region thereof. At least part of the widened region is then provided with a material region for the insulation region.
公开/授权文献
- US20030045052A1 Method for fabricating a trench structure 公开/授权日：2003-03-06
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