发明授权
- 专利标题： Structure to achieve high-Q and low insertion loss film bulk acoustic resonators
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申请号： US10716750申请日： 2003-11-19
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公开(公告)号： US06861783B2公开(公告)日： 2005-03-01
- 发明人: Li-Peng Wang , Qing Ma , Valluri Rao
- 申请人： Li-Peng Wang , Qing Ma , Valluri Rao
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwegman, Lundberg, Woessner & Kluth, P.A.
- 主分类号： H03H3/02
- IPC分类号： H03H3/02 ; H03H9/17 ; H01L41/08
摘要：
A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.
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