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    Arrangement and method to perform scanning readout of ferroelectric bit charges
    1.
    发明授权
    Arrangement and method to perform scanning readout of ferroelectric bit charges 有权
    执行铁电位电荷的扫描读出的布置和方法

    公开(公告)号：US08264941B2

    公开(公告)日：2012-09-11

    申请号：US11964580

    申请日：2007-12-26

    申请人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    发明人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    IPC分类号： G11B9/02

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media.

    摘要翻译： 读取存储在铁电介质层中的信息的布置，方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层，对应于信息的畴; 具有尖端的探针，其中介质和尖端适于相对于彼此移动，使得尖端扫描介质的铁电畴，同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路，同时扫描与所述区域接触的尖端，所述信号对应于存储在所述介质中的铁电位电荷的读出信号。

    FBAR device frequency stabilized against temperature drift
    2.
    发明申请
    FBAR device frequency stabilized against temperature drift 审中-公开
    FBAR器件频率稳定，防止温度漂移

    公开(公告)号：US20060001329A1

    公开(公告)日：2006-01-05

    申请号：US10882510

    申请日：2004-06-30

    申请人： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

    发明人： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

    IPC分类号： H01L41/08

    CPC分类号： H03H9/02102 ,  H03H2009/02196

    摘要： A film bulk acoustic resonator (FBAR) comprises a piezoelectric film sandwiched between a top electrode and a bottom electrode. A temperature sensor is provided to sense a temperature to determine a temperature induced frequency drift for the FBAR. A voltage controller operatively connected to the temperature sensor supplies a direct current (DC) bias voltage to the FBAR to induce an opposite voltage induced frequency drift to compensate for the temperature induced frequency drift.

    摘要翻译： 薄膜体声波谐振器（FBAR）包括夹在顶部电极和底部电极之间的压电薄膜。 提供温度传感器以感测温度以确定FBAR的温度感应频率漂移。 可操作地连接到温度传感器的电压控制器向FBAR提供直流（DC）偏置电压以引起相反的电压感应频率漂移以补偿温度引起的频率漂移。

    DATA RETENTION OF FERROELECTRIC FILMS BY CONTROLLING FILM COMPOSITION AND STRAIN GRADIENT FOR PROBE-BASED DEVICES
    5.
    发明申请
    DATA RETENTION OF FERROELECTRIC FILMS BY CONTROLLING FILM COMPOSITION AND STRAIN GRADIENT FOR PROBE-BASED DEVICES 有权
    通过控制薄膜组合物和基于探针的器件的应变梯度的数据保留电磁膜

    公开(公告)号：US20100260033A1

    公开(公告)日：2010-10-14

    申请号：US12420717

    申请日：2009-04-08

    申请人： Li Peng Wang ,  Qing Ma ,  Valluri Rao

    发明人： Li Peng Wang ,  Qing Ma ,  Valluri Rao

    IPC分类号： G11B9/02 ,  G11B7/26

    CPC分类号： G11B9/02 ,  G11B9/04

    摘要： For a probe based data storage (PDS) device a ferroelectric film stack may be used as a media to store data bits by polarizing areas of the film as either an up domain or a down domain to represent bits. However a built-in-bias field (BBF) may create domain retention problems. By growing the ferroelectric films with stress and composition gradients this may generate polarization gradients which reduce the bias field. Thus, the retention (or imprint) may be improved with minimized BBF.

    摘要翻译： 对于基于探针的数据存储（PDS）设备，可以使用铁电膜堆叠作为媒体以通过将胶片的区域偏置为向上域或向下域来表示位来存储数据位。 然而，内置偏置字段（BBF）可能会创建域保留问题。 通过生长具有应力和成分梯度的铁电薄膜，这可能产生减小偏压场的偏振梯度。 因此，可以通过最小化BBF来改善保留（或印记）。

    Frequency tuning of film bulk acoustic resonators (FBAR)
    7.
    发明申请
    Frequency tuning of film bulk acoustic resonators (FBAR) 审中-公开
    薄膜体声共振器（FBAR）的频率调谐

    公开(公告)号：US20070139140A1

    公开(公告)日：2007-06-21

    申请号：US11314361

    申请日：2005-12-20

    申请人： Valluri Rao ,  Theodore Doros ,  Qing Ma ,  Krishna Seshan ,  Li-Peng Wang

    发明人： Valluri Rao ,  Theodore Doros ,  Qing Ma ,  Krishna Seshan ,  Li-Peng Wang

    IPC分类号： H03H9/58

    CPC分类号： H03H3/04 ,  H03H3/0076 ,  H03H2003/0428 ,  H03H2003/0478

    摘要： Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.

    摘要翻译： 多个FBAR可以在单个晶片上制造并且稍后被切割。 理想地，形成在晶片中的所有器件将具有相同的谐振频率。 然而，由于制造方差，FBAR器件的频率响应可能会在晶圆上略有不同。 可以创建RF映射以确定晶片上的区域，其中该区域中的FBAR全部从目标频率变化相似程度。 调谐层可以沉积在晶片上。 可以使用基于由RF映射表示的区域的调谐层的光刻图案特征来将FBAR校正到目标谐振频率，同时FBAR在晶片上仍然完整。