发明授权
- 专利标题: Ion plating device and ion plating method
- 专利标题(中): 离子镀装置及离子镀法
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申请号: US09812668申请日: 2001-03-20
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公开(公告)号: US06863018B2公开(公告)日: 2005-03-08
- 发明人: Yasuhiro Koizumi , Kouichi Nose , Isao Tokomoto
- 申请人: Yasuhiro Koizumi , Kouichi Nose , Isao Tokomoto
- 申请人地址: JP Hyogo
- 专利权人: Shinmaywa Industries, Ltd.
- 当前专利权人: Shinmaywa Industries, Ltd.
- 当前专利权人地址: JP Hyogo
- 代理机构: Marshall, Gerstein & Borun LLP
- 优先权: JP2000-078952 20000321
- 主分类号: B01J19/08
- IPC分类号: B01J19/08 ; C23C14/32 ; C23C14/48 ; H01J37/32 ; C23C16/00 ; H05H1/00 ; H01G37/317
摘要:
In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.
公开/授权文献
- US20010023822A1 Ion plating device and ion plating method 公开/授权日:2001-09-27
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