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    Vacuum film deposition method and system, and filter manufactured by using the same
    1.
    发明申请
    Vacuum film deposition method and system, and filter manufactured by using the same 审中-公开
    真空膜沉积方法和系统，以及使用该过滤器制造的过滤器

    公开(公告)号：US20070098889A1

    公开(公告)日：2007-05-03

    申请号：US10570449

    申请日：2004-08-30

    申请人： Kouichi Nose ,  Shinichi Yamabe ,  Isao Tokomoto ,  Takanobu Hori ,  Atsushi Shozude ,  Takahiko Kondo

    发明人： Kouichi Nose ,  Shinichi Yamabe ,  Isao Tokomoto ,  Takanobu Hori ,  Atsushi Shozude ,  Takahiko Kondo

    IPC分类号： C23C16/00 ,  B05D3/00

    CPC分类号： C23C14/505 ,  C23C14/24 ,  C23C14/541

    摘要： A vacuum film deposition method comprises the steps of mounting a substrate on a substrate holder (6a) that is disposed in a vacuum chamber (1) and is provided with a passage (7f), (7g), and (7j) in which predetermined heat medium flows; maintaining an inside of the vacuum chamber substantially in vacuum state; evaporating evaporation materials from two or more evaporation sources in the inside of the vacuum chamber; and diffusing the evaporated evaporation materials in the inside of the vacuum chamber in a predetermined order; and depositing the diffused evaporation materials on a deposition surface of the substrate, thereby forming a multi-layered film made of the evaporation materials on the deposition surface of the substrate; wherein an antifreezing fluid is used as the predetermined heat medium flowing in the passage of the substrate holder.

    摘要翻译： 真空膜沉积方法包括以下步骤：将基板安装在设置在真空室（1）中的基板保持器（6a）上，并设置有通道（7f），（7g）和（7j） ），其中预定的热介质流动; 在真空状态下保持真空室的内部; 从真空室内部的两个或更多个蒸发源蒸发蒸发材料; 并以预定的顺序将蒸发的蒸发材料扩散到真空室的内部; 并将扩散的蒸发材料沉积在基板的沉积表面上，由此在基板的沉积表面上形成由蒸发材料制成的多层膜; 其中使用防冻流体作为在所述基板保持器的通道中流动的预定热介质。

    Arc Evaporation Source and Vacuum Deposition System
    3.
    发明申请
    Arc Evaporation Source and Vacuum Deposition System 审中-公开
    电弧蒸发源和真空沉积系统

    公开(公告)号：US20090057144A1

    公开(公告)日：2009-03-05

    申请号：US12281583

    申请日：2006-06-22

    申请人： Yasuhiro Koizumi ,  Kouichi Nose

    发明人： Yasuhiro Koizumi ,  Kouichi Nose

    IPC分类号： C23C14/24

    CPC分类号： C23C14/325 ,  C23C14/243

    摘要： An arc evaporation source and a vacuum deposition system capable of properly collecting an evaporated material emitted from a cathode in vacuum arc discharge are provided. An arc evaporation source (100) includes a first electrode and a second electrode (14A, 14B) disposed so as to face each other with a gap (G) therebetween. The first and second electrodes (14A, 14B) are configured such that at least one of the first and second electrodes (14A, 14B) is operable as a cathode, and the other one of the first and second electrodes (14A, 14B) is operable to collect an evaporated material emitted from the cathode, based on a vacuum arc discharge occurring between the cathode and an anode.

    摘要翻译： 提供了一种能够在真空电弧放电中适当地收集从阴极发出的蒸发材料的电弧蒸发源和真空沉积系统。 电弧蒸发源（100）包括第一电极和第二电极（14A，14B），所述第一电极和第二电极（14A，14B）以彼此间的间隙（G）彼此面对设置。 第一和第二电极（14A，14B）被配置为使得第一和第二电极（14A，14B）中的至少一个可用作阴极，并且第一和第二电极（14A，14B）中的另一个是 基于在阴极和阳极之间发生的真空电弧放电，可操作地收集从阴极发射的蒸发材料。

    System and method for film formation
    5.
    发明申请
    System and method for film formation 审中-公开
    成膜系统和方法

    公开(公告)号：US20070039545A1

    公开(公告)日：2007-02-22

    申请号：US10554901

    申请日：2004-05-25

    申请人： Kouichi Nose ,  Koichi Sasagawa ,  Takeshi Furutsuka ,  Shiro Takigawa ,  Yasuhiro Koizumi

    发明人： Kouichi Nose ,  Koichi Sasagawa ,  Takeshi Furutsuka ,  Shiro Takigawa ,  Yasuhiro Koizumi

    IPC分类号： C23C14/00 ,  H05H1/24

    CPC分类号： C23C14/205 ,  B05D1/62 ,  B05D5/068 ,  C23C14/0036 ,  C23C14/0089 ,  C23C14/352 ,  C23C14/562 ,  C23C16/45557 ,  C23C16/509

    摘要： The present invention provides film formation systems and film formation methods. A high frequency (HF) electric power supply (11) applies a high frequency voltage to a cathode (5) which is provided, at its rear surface, with a permanent magnet (10), thereby to generate a reactive-mode plasma, and film formation by plasma polymerization is performed by the use of the generated reactive-mode plasma. The pressure of a plasma source gas in a vacuum chamber (1) is regulated, thereby to generate not a reactive-mode plasma but a metallic-mode plasma. The cathode (5) as a target is subjected to sputtering by the generated metallic-mode plasma, and film formation by magnetron sputtering is carried out.

    摘要翻译： 本发明提供成膜体系和成膜方法。 高频（HF）电源（11）向在其后表面设置有永磁体（10）的阴极（5）施加高频电压，从而产生电抗等离子体，并且 通过使用所生成的反应型等离子体来进行通过等离子体聚合的膜形成。 调节真空室（1）中的等离子体源气体的压力，从而不产生反应型等离子体而是产生金属模式等离子体。 作为靶的阴极（5）通过所产生的金属模式等离子体进行溅射，并且通过磁控溅射进行成膜。

    Plasma display panel
    6.
    发明授权
    Plasma display panel 失效
    等离子显示面板

    公开(公告)号：US06831413B2

    公开(公告)日：2004-12-14

    申请号：US10196267

    申请日：2002-07-17

    申请人： Hiroshi Kajiyama ,  Akira Katou ,  Kenichi Onisawa ,  Tetsuro Minemura ,  Kazuo Uetani ,  Yasushi Ihara ,  Shiro Takigawa ,  Kouichi Nose ,  Isao Tokomoto ,  Yasuhiro Koizumi

    发明人： Hiroshi Kajiyama ,  Akira Katou ,  Kenichi Onisawa ,  Tetsuro Minemura ,  Kazuo Uetani ,  Yasushi Ihara ,  Shiro Takigawa ,  Kouichi Nose ,  Isao Tokomoto ,  Yasuhiro Koizumi

    IPC分类号： H01J1749

    CPC分类号： H01J11/40 ,  H01J11/12

    摘要： A plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

    摘要翻译： 一种等离子体显示面板（PDP），其由配备有显示电极（8）的前面板（10）和配备有寻址电极（3）的后面板（4）组成，其通过在小放电空间中放电而显示图像 两面板之间形成; 其中，设置有两层由金属氧化物制成的覆盖安装在前面板（10）上的电介质层（7）的保护膜（5,6）。 所述外层上层（6）形成比表面积为20m 2 / g以上且膜厚为1μm以下且呈现高放电特性的材料层; 并且所述内下层（5）形成为具有10m 2 / g以下的比表面积和1μm以上的膜厚的材料层，具有低的吸水特性。

    Ion plating device and ion plating method
    8.
    发明授权
    Ion plating device and ion plating method 失效
    离子镀装置及离子镀法

    公开(公告)号：US06863018B2

    公开(公告)日：2005-03-08

    申请号：US09812668

    申请日：2001-03-20

    申请人： Yasuhiro Koizumi ,  Kouichi Nose ,  Isao Tokomoto

    发明人： Yasuhiro Koizumi ,  Kouichi Nose ,  Isao Tokomoto

    IPC分类号： B01J19/08 ,  C23C14/32 ,  C23C14/48 ,  H01J37/32 ,  C23C16/00 ,  H05H1/00 ,  H01G37/317

    CPC分类号： H01J37/32422 ,  C23C14/32 ,  H01J37/32706

    摘要： In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.

    摘要翻译： 在将基板保持在放置在真空室中的基板保持架上的离子电镀中，在真空室内产生等离子体以形成膜，由具有预定的负电压值的负偏压分量构成的偏置电压用于 预定的输出时间和对应于具有恒定正值的预定时间的脉冲输出的脉冲偏压分量并以设置在1kHz-1GHz的范围内的周期输出被提供给真空室的内部 持有人由电源单元。