公开(公告)号：US06918351B2

公开(公告)日：2005-07-19

申请号：US10133140

申请日：2002-04-26

申请人： Jiong Chen ,  Zhimin Wan

发明人： Jiong Chen ,  Zhimin Wan

IPC分类号： H01J37/317 ,  C23C16/00 ,  H01G37/317

CPC分类号： H01J37/3171 ,  H01J2237/0041

摘要： This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.

摘要翻译： 本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。 离子注入装置包括紧邻离子提取装置设置的离子束扫掠和偏转装置。 离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。 质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。 施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。

公开(公告)号：US06863018B2

公开(公告)日：2005-03-08

申请号：US09812668

申请日：2001-03-20

申请人： Yasuhiro Koizumi ,  Kouichi Nose ,  Isao Tokomoto

发明人： Yasuhiro Koizumi ,  Kouichi Nose ,  Isao Tokomoto

IPC分类号： B01J19/08 ,  C23C14/32 ,  C23C14/48 ,  H01J37/32 ,  C23C16/00 ,  H05H1/00 ,  H01G37/317

CPC分类号： H01J37/32422 ,  C23C14/32 ,  H01J37/32706

摘要： In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.

摘要翻译： 在将基板保持在放置在真空室中的基板保持架上的离子电镀中，在真空室内产生等离子体以形成膜，由具有预定的负电压值的负偏压分量构成的偏置电压用于 预定的输出时间和对应于具有恒定正值的预定时间的脉冲输出的脉冲偏压分量并以设置在1kHz-1GHz的范围内的周期输出被提供给真空室的内部 持有人由电源单元。