Method and apparatus for observing or processing and analyzing using a charged beam
    1.
    发明授权
    Method and apparatus for observing or processing and analyzing using a charged beam 有权
    使用带电束观察或处理和分析的方法和装置

    公开(公告)号:US06476387B1

    公开(公告)日:2002-11-05

    申请号:US09311268

    申请日:1999-05-14

    IPC分类号: H01J3730

    摘要: In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).

    摘要翻译: 在通过在至少部分地被绝缘体膜覆盖的样品上照射带电束的样品的表面的方法中,紫外光可能作为脉冲照射在样品(衬底)上,从而将绝缘体 由于光电导效应而成为导电材料,从而将样品(基板)的表面转变为导电材料,使得带电粒子从接地部分接地,以防止带电粒子由于带电粒子而被斥力 被照射的带电光束积聚在形成在样品(基板)表面上的绝缘体中。

    System and method for film formation
    3.
    发明申请
    System and method for film formation 审中-公开
    成膜系统和方法

    公开(公告)号:US20070039545A1

    公开(公告)日:2007-02-22

    申请号:US10554901

    申请日:2004-05-25

    IPC分类号: C23C14/00 H05H1/24

    摘要: The present invention provides film formation systems and film formation methods. A high frequency (HF) electric power supply (11) applies a high frequency voltage to a cathode (5) which is provided, at its rear surface, with a permanent magnet (10), thereby to generate a reactive-mode plasma, and film formation by plasma polymerization is performed by the use of the generated reactive-mode plasma. The pressure of a plasma source gas in a vacuum chamber (1) is regulated, thereby to generate not a reactive-mode plasma but a metallic-mode plasma. The cathode (5) as a target is subjected to sputtering by the generated metallic-mode plasma, and film formation by magnetron sputtering is carried out.

    摘要翻译: 本发明提供成膜体系和成膜方法。 高频(HF)电源(11)向在其后表面设置有永磁体(10)的阴极(5)施加高频电压,从而产生电抗等离子体,并且 通过使用所生成的反应型等离子体来进行通过等离子体聚合的膜形成。 调节真空室(1)中的等离子体源气体的压力,从而不产生反应型等离子体而是产生金属模式等离子体。 作为靶的阴极(5)通过所产生的金属模式等离子体进行溅射,并且通过磁控溅射进行成膜。

    Plasma display panel
    4.
    发明授权
    Plasma display panel 失效
    等离子显示面板

    公开(公告)号:US06831413B2

    公开(公告)日:2004-12-14

    申请号:US10196267

    申请日:2002-07-17

    IPC分类号: H01J1749

    CPC分类号: H01J11/40 H01J11/12

    摘要: A plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

    摘要翻译: 一种等离子体显示面板(PDP),其由配备有显示电极(8)的前面板(10)和配备有寻址电极(3)的后面板(4)组成,其通过在小放电空间中放电而显示图像 两面板之间形成; 其中,设置有两层由金属氧化物制成的覆盖安装在前面板(10)上的电介质层(7)的保护膜(5,6)。 所述外层上层(6)形成比表面积为20m 2 / g以上且膜厚为1μm以下且呈现高放电特性的材料层; 并且所述内下层(5)形成为具有10m 2 / g以下的比表面积和1μm以上的膜厚的材料层,具有低的吸水特性。

    Exposure of uniform fine pattern on photoresist
    7.
    发明授权
    Exposure of uniform fine pattern on photoresist 失效
    曝光均匀的精细图案在光致抗蚀剂上

    公开(公告)号:US4704348A

    公开(公告)日:1987-11-03

    申请号:US779832

    申请日:1985-09-25

    CPC分类号: G03F7/2041 G03F7/70866

    摘要: Exposure of fine patterns on a photoresist is carried out by controlling the humidity and temperature of a gas to be supplied to an exposure apparatus separate from the ambient atmosphere.Temperature of the atmosphere at least in the vicinity of a photoresist is controlled in a predetermined range and air or gas to be supplied to the exposure space is humidified to a desired degree.Water content in the photoresist is kept uniform and constant by the specially controlled atmosphere and enables uniform pattern width of the exposed fine pattern all over the photoresist surface.

    摘要翻译: 通过控制要提供给与环境大气分离的曝光设备的气体的湿度和温度来进行光刻胶上的精细图案的曝光。 将至少在光致抗蚀剂附近的气氛的温度控制在预定范围内,供给到曝光空间的空气或气体被加湿到期望的程度。 光致抗蚀剂中的含水量通过特殊控制的气氛保持均匀和恒定,并且能够在光致抗蚀剂表面的整个表面上均匀地曝露精细图案的图案宽度。

    Method and apparatus for repairing defects on a photo-mask pattern
    8.
    发明授权
    Method and apparatus for repairing defects on a photo-mask pattern 失效
    用于修复光掩模图案上的缺陷的方法和装置

    公开(公告)号:US4609566A

    公开(公告)日:1986-09-02

    申请号:US713860

    申请日:1985-03-20

    CPC分类号: G03F1/72 Y10S430/146

    摘要: A photo-mask is mounted on a repairing chamber, with its mask pattern forming surface being exposed to the interior of the chamber. Vaporized repairing material which includes a metallic element is introduced into the chamber, and a laser beam is projected from the exterior of the chamber onto a transparent defect of the mask pattern. The irradiated portion is heated and the vaporized repairing material at the heated portion is resolved, resulting in the metal resolved from the repairing material deposits and fills the transparent defect. Thus, transparent defects of a mask pattern can be repaired in a simplified process.

    摘要翻译: 光掩模安装在修理室上,其掩模图案形成表面暴露于室的内部。 将包含金属元素的汽化修复材料引入室中,并且将激光束从腔室的外部突出到掩模图案的透明缺陷上。 照射部分被加热,并且在加热部分处的蒸发的修复材料被分解,导致从修复材料中分解的金属沉积并填充透明缺陷。 因此,可以在简化的过程中修复掩模图案的透明缺陷。

    Arc Evaporation Source and Vacuum Deposition System
    9.
    发明申请
    Arc Evaporation Source and Vacuum Deposition System 审中-公开
    电弧蒸发源和真空沉积系统

    公开(公告)号:US20090057144A1

    公开(公告)日:2009-03-05

    申请号:US12281583

    申请日:2006-06-22

    IPC分类号: C23C14/24

    CPC分类号: C23C14/325 C23C14/243

    摘要: An arc evaporation source and a vacuum deposition system capable of properly collecting an evaporated material emitted from a cathode in vacuum arc discharge are provided. An arc evaporation source (100) includes a first electrode and a second electrode (14A, 14B) disposed so as to face each other with a gap (G) therebetween. The first and second electrodes (14A, 14B) are configured such that at least one of the first and second electrodes (14A, 14B) is operable as a cathode, and the other one of the first and second electrodes (14A, 14B) is operable to collect an evaporated material emitted from the cathode, based on a vacuum arc discharge occurring between the cathode and an anode.

    摘要翻译: 提供了一种能够在真空电弧放电中适当地收集从阴极发出的蒸发材料的电弧蒸发源和真空沉积系统。 电弧蒸发源(100)包括第一电极和第二电极(14A,14B),所述第一电极和第二电极(14A,14B)以彼此间的间隙(G)彼此面对设置。 第一和第二电极(14A,14B)被配置为使得第一和第二电极(14A,14B)中的至少一个可用作阴极,并且第一和第二电极(14A,14B)中的另一个是 基于在阴极和阳极之间发生的真空电弧放电,可操作地收集从阴极发射的蒸发材料。

    Fabrication method of semiconductor integrated circuit device and mask fabrication method
    10.
    发明授权
    Fabrication method of semiconductor integrated circuit device and mask fabrication method 有权
    半导体集成电路器件的制造方法和掩模制造方法

    公开(公告)号:US07252910B2

    公开(公告)日:2007-08-07

    申请号:US10762548

    申请日:2004-01-23

    IPC分类号: G03F1/00

    CPC分类号: G03F1/72 G03F1/64

    摘要: A mask fabrication time is shortened. By patterning an electron-sensitive resist film coated on a main surface of a mask substrate, a pellicle is mounted on the main surface of the mask substrate immediately after a resist pattern made from an electron beam sensitive resist film and having light-shielding characteristics with respect to exposure light is formed. Subsequently, by irradiating a laser beam to defect made from the electron beam sensitive resist film with the pellicle being mounted on the mask substrate, the defect is removed. Since the defect can be removed without removing the pellicle, the mask fabrication time can be shortened.

    摘要翻译: 掩模制造时间缩短。 通过对涂布在掩模基板的主表面上的电子敏感膜形成图案,将防护薄膜组件立即安装在掩模基板的主表面上,紧接在由电子束敏感抗蚀剂膜制成的抗蚀剂图案之后,具有遮光特性 形成曝光光。 随后,通过将光束照射到由防护薄膜组件安装在掩模基板上的由电子束敏感抗蚀剂膜制成的缺陷上,从而去除缺陷。 由于可以在不去除防护薄膜的情况下去除缺陷,因此可以缩短掩模制造时间。