System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.