Invention Grant
- Patent Title: Post thermal treatment methods of forming high dielectric layers in integrated circuit devices
- Patent Title (中): 在集成电路器件中形成高介电层的后热处理方法
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Application No.: US10650415Application Date: 2003-08-29
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Publication No.: US06875678B2Publication Date: 2005-04-05
- Inventor: Hyung-suk Jung , Nae-in Lee , Jong-ho Lee , Yun-seok Kim
- Applicant: Hyung-suk Jung , Nae-in Lee , Jong-ho Lee , Yun-seok Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2002-0054606 20020910
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/314 ; H01L21/316 ; H01L21/318 ; H01L29/51 ; H01L21/3205 ; H01L21/4763
Abstract:
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.
Public/Granted literature
- US20040048491A1 Post thermal treatment methods of forming high dielectric layers in integrated circuit devices Public/Granted day:2004-03-11
Information query
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