发明授权
US06875709B2 Application of a supercritical CO2 system for curing low k dielectric materials
失效
应用超临界CO2系统固化低k电介质材料
- 专利标题： Application of a supercritical CO2 system for curing low k dielectric materials
- 专利标题（中）： 应用超临界CO2系统固化低k电介质材料
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申请号： US10383710申请日： 2003-03-07
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公开(公告)号： US06875709B2公开(公告)日： 2005-04-05
- 发明人: Chun-Hsien Lin , Henry Lo , Anthony Liu , Yu-Liang Lin
- 申请人： Chun-Hsien Lin , Henry Lo , Anthony Liu , Yu-Liang Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Comapny, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Comapny, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/312 ; H01L21/768 ; H01L21/31 ; H01L21/469
摘要：
A method and apparatus for curing and modifying a low k dielectric layer in an interconnect structure is disclosed. A spin-on low k dielectric layer which includes an organic silsesquioxane, polyarylether, bisbenzocyclobuene, or SiLK is spin coated on a substrate. The substrate is placed in a process chamber in a supercritical CO2 system and is treated at a temperature between 30° C. and 150° C. and at a pressure from 70 to 700 atmospheres. A co-solvent such as CF3—X or F—X is added that selectively replaces C—CH3 bonds with C—CF3 or C—F bonds. Alternatively, H2O2 is employed as co-solvent to replace a halogen in a C—Z bond where Z=F, Cl, or Br with an hydroxyl group. Two co-solvents may be combined with CO2 for more flexibility. The cured dielectric layer has improved properties that include better adhesion, lower k value, increased hardness, and a higher elastic modulus.