Application of a supercritical CO2 system for curing low k dielectric materials
    1.
    发明授权
    Application of a supercritical CO2 system for curing low k dielectric materials 失效
    应用超临界CO2系统固化低k电介质材料

    公开(公告)号:US06875709B2

    公开(公告)日:2005-04-05

    申请号:US10383710

    申请日:2003-03-07

    摘要: A method and apparatus for curing and modifying a low k dielectric layer in an interconnect structure is disclosed. A spin-on low k dielectric layer which includes an organic silsesquioxane, polyarylether, bisbenzocyclobuene, or SiLK is spin coated on a substrate. The substrate is placed in a process chamber in a supercritical CO2 system and is treated at a temperature between 30° C. and 150° C. and at a pressure from 70 to 700 atmospheres. A co-solvent such as CF3—X or F—X is added that selectively replaces C—CH3 bonds with C—CF3 or C—F bonds. Alternatively, H2O2 is employed as co-solvent to replace a halogen in a C—Z bond where Z=F, Cl, or Br with an hydroxyl group. Two co-solvents may be combined with CO2 for more flexibility. The cured dielectric layer has improved properties that include better adhesion, lower k value, increased hardness, and a higher elastic modulus.

    摘要翻译: 公开了一种用于固化和修饰互连结构中的低k电介质层的方法和装置。 将包含有机倍半硅氧烷,聚芳醚,双苯并环丁烯或SiLK的旋涂低k电介质层旋涂在基材上。 将基材置于超临界CO 2体系的处理室中,并在30℃至150℃的温度和70至700大气压的压力下进行处理。 加入共溶剂如CF 3 -X或F-X,其选择性地用C-CF 3或C-F键取代C-CH 3键。 或者,使用H 2 O 2作为助溶剂代替C-Z键中的卤素,其中Z = F,Cl或Br与羟基。 两种共溶剂可以与二氧化碳组合以获得更大的灵活性。 固化的介电层具有改进的性能,其包括更好的附着力,较低的k值,更高的硬度和更高的弹性模量。