发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US09956556申请日： 2001-09-20
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公开(公告)号： US06876030B2公开(公告)日： 2005-04-05
- 发明人: Kiyoshi Uchiyama , Yasuhiro Shimada , Koji Arita , Tatsuo Otsuki
- 申请人： Kiyoshi Uchiyama , Yasuhiro Shimada , Koji Arita , Tatsuo Otsuki
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon Peabody LLP
- 代理商 Donald R. Studebaker
- 优先权： JP2000-288373 20000922
- 主分类号： B65G1/137
- IPC分类号： B65G1/137 ; G11C11/22 ; H01L21/8246 ; H01L21/8247 ; H01L27/105 ; H01L29/51 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L29/76
摘要：
A semiconductor memory device includes a field-effect transistor with a gate electrode that has been formed over a semiconductor substrate with a ferroelectric layer interposed between the electrode and the substrate. The device includes a first insulating layer, which is insulated against a leakage current more fully than the ferroelectric layer, between the ferroelectric layer and the gate electrode.
公开/授权文献
- US20020036314A1 Semiconductor memory device 公开/授权日：2002-03-28
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