公开(公告)号：US06876030B2

公开(公告)日：2005-04-05

申请号：US09956556

申请日：2001-09-20

申请人： Kiyoshi Uchiyama ,  Yasuhiro Shimada ,  Koji Arita ,  Tatsuo Otsuki

发明人： Kiyoshi Uchiyama ,  Yasuhiro Shimada ,  Koji Arita ,  Tatsuo Otsuki

IPC分类号： B65G1/137 ,  G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

CPC分类号： H01L29/516 ,  H01L29/78391 ,  H01L29/7881

摘要： A semiconductor memory device includes a field-effect transistor with a gate electrode that has been formed over a semiconductor substrate with a ferroelectric layer interposed between the electrode and the substrate. The device includes a first insulating layer, which is insulated against a leakage current more fully than the ferroelectric layer, between the ferroelectric layer and the gate electrode.

摘要翻译： 半导体存储器件包括具有栅极电极的场效应晶体管，该栅极电极已经形成在半导体衬底上，其中介于电极和衬底之间的铁电层。 该器件包括第一绝缘层，其在铁电层和栅电极之间绝对抵抗比铁电层更全面的泄漏电流。

公开(公告)号：US06580632B2

公开(公告)日：2003-06-17

申请号：US09782300

申请日：2001-02-14

申请人： Yasuhiro Shimada ,  Koji Arita ,  Kiyoshi Uchiyama

发明人： Yasuhiro Shimada ,  Koji Arita ,  Kiyoshi Uchiyama

IPC分类号： G11C1122

CPC分类号： H01L29/516 ,  G11C11/22 ,  G11C11/223 ,  H01L29/78391

摘要： Data is read out from a ferroelectric film with its remnant polarization associated with one of two possible logical states of the data and with a bias voltage applied to a control gate electrode over the ferroelectric film. The ferroelectric film creates either up or down remnant polarization. So the down remnant polarization may represent data “1” while the up or almost zero remnant polarization may represent data “0”, for example. By regarding the almost zero remnant polarization state as representing data “0”, a read current value becomes substantially constant in the data “0” state. As a result, the read accuracy improves. Also, if imprinting of one particular logical state (e.g., data “1”) is induced in advance, then the read accuracy further improves.

摘要翻译： 从强电介质薄膜读​​出数据，其剩余极化与数据的两种可能的逻辑状态之一相关，并且施加到铁电体膜上的控制栅电极上的偏置电压。 铁电薄膜产生上或下残余极化。 因此，向下残留极化可以表示数据“1”，而上或近零残余极化例如可以表示数据“0”。 通过将几乎为零的残余极化状态作为表示数据“0”，读取的电流值在数据“0”状态下变得基本恒定。 结果，读取精度提高。 此外，如果预先诱导一个特定逻辑状态（例如，数据“1”）的印记，则读取精度进一步提高。

公开(公告)号：US06396095B1

公开(公告)日：2002-05-28

申请号：US09869522

申请日：2001-06-29

申请人： Yasuhiro Shimada ,  Koji Arita ,  Kiyoshi Uchiyama

发明人： Yasuhiro Shimada ,  Koji Arita ,  Kiyoshi Uchiyama

IPC分类号： H01L2976

CPC分类号： G11C11/22 ,  H01L21/28291 ,  H01L29/42324 ,  H01L29/516 ,  H01L29/78391

摘要： Source/drain regions for a field effect transistor are defined in a semiconductor substrate with a channel region interposed therebetween. A first gate electrode is formed over the semiconductor substrate with an insulating film sandwiched therebetween and has a gate length shorter than the length of the channel region. A ferroelectric film is formed to cover the first gate electrode and to have both side portions thereof make contact with the insulating film. A second gate electrode is formed to cover the ferroelectric film.

摘要翻译： 用于场效应晶体管的源极/漏极区限定在其间插入沟道区的半导体衬底中。 第一栅电极形成在半导体衬底之上，绝缘膜夹在其间，栅极长度短于沟道区的长度。 形成铁电膜以覆盖第一栅电极并且使其两侧部分与绝缘膜接触。 形成第二栅电极以覆盖铁电体膜。

公开(公告)号：US06326315B1

公开(公告)日：2001-12-04

申请号：US09523919

申请日：2000-03-09

申请人： Kiyoshi Uchiyama ,  Koji Arita ,  Narayan Solayappan ,  Carlos A. Paz de Araujo

发明人： Kiyoshi Uchiyama ,  Koji Arita ,  Narayan Solayappan ,  Carlos A. Paz de Araujo

IPC分类号： H01L2131

CPC分类号： H01L21/28291 ,  C30B7/00 ,  C30B7/005 ,  C30B29/68

摘要： A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid ramping anneal (“RRA”) technique with a ramping rate of 50° C./second at a hold temperature of 650° C. for a holding time of 30 minutes.

摘要翻译： 用于形成层状超晶格材料的液体前体被施加到集成电路基板。 使用快速斜面退火（“RRA”）技术将前体涂层在氧气中退火，在650℃的保持温度下以50℃/秒的升高速率保持30分钟的保持时间。

公开(公告)号：US20050184328A1

公开(公告)日：2005-08-25

申请号：US11059451

申请日：2005-02-17

申请人： Kiyoshi Uchiyama ,  Shintarou Ida ,  Yasuhiro Shimada ,  Kazunori Isogai ,  Yoshihisa Kato

发明人： Kiyoshi Uchiyama ,  Shintarou Ida ,  Yasuhiro Shimada ,  Kazunori Isogai ,  Yoshihisa Kato

IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/108 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/56

摘要： In a semiconductor device in which a thin film containing a metal oxide is formed on a semiconductor element, the thin film is an aggregate of crystal particles formed of the metal oxide, and the crystal particles are bonded to each other at a part of its surface.

摘要翻译： 在其中在半导体元件上形成含有金属氧化物的薄膜的半导体器件中，薄膜是由金属氧化物形成的晶体颗粒的聚集体，并且晶体颗粒在其表面的一部分彼此结合 。

公开(公告)号：US06351004B1

公开(公告)日：2002-02-26

申请号：US09688494

申请日：2000-10-16

申请人： Yasuhiro Shimada ,  Shinichiro Hayashi ,  Kiyoshi Uchiyama ,  Keisuke Tanaka

发明人： Yasuhiro Shimada ,  Shinichiro Hayashi ,  Kiyoshi Uchiyama ,  Keisuke Tanaka

IPC分类号： H01L2978

CPC分类号： H01L29/6684 ,  H01L21/28291 ,  H01L29/772 ,  H01L29/78391

摘要： A tunneling transistor is provided as an effective means for miniaturization of a semiconductor integrated circuit having nonvolatile memory. An insulating layer is disposed on a silicon substrate. A source and a drain are disposed on the insulating layer, with an insulator of a few nanometers in thickness that provides a tunnel barrier being interposed between the source and the drain. A ferroelectric layer that exhibits spontaneous polarization is disposed directly above a region of the source that is adjacent to the insulator. With this construction, when the ferroelectric layer is polarized in a predetermined direction, at least a portion of the region of the source adjacent to the insulator forms a depletion region, with it being possible to vary the amount of current tunneling through the insulator depending on whether the ferroelectric layer is polarized or not.

摘要翻译： 提供隧道晶体管作为具有非易失性存储器的半导体集成电路的小型化的有效手段。 绝缘层设置在硅衬底上。 源极和漏极设置在绝缘层上，具有几纳米厚度的绝缘体，其提供了在源极和漏极之间插入的隧道势垒。 显示自发极化的铁电层直接设置在与绝缘体相邻的源极的正上方。 利用这种结构，当铁电层在预定方向上极化时，与绝缘体相邻的源极的区域的至少一部分形成耗尽区，根据该结构，可以改变通过绝缘体的电流隧穿量 铁电层是否极化。

公开(公告)号：US20130025200A1

公开(公告)日：2013-01-31

申请号：US13136258

申请日：2011-07-27

申请人： Kiyoshi Uchiyama

发明人： Kiyoshi Uchiyama

IPC分类号： C10J3/72

CPC分类号： C10J3/20 ,  C10J3/36 ,  C10J3/485 ,  C10J3/487 ,  C10J3/723 ,  C10J2200/156 ,  C10J2300/0916 ,  C10J2300/0956 ,  C10J2300/0976 ,  C10J2300/165 ,  C10J2300/1838 ,  C10J2300/1869 ,  C10J2300/1884 ,  C10J2300/1892 ,  C10K3/023 ,  Y02P20/129

摘要： A gasifier system for converting biomass to biogas includes a reaction chamber with a biomass supply port for receiving a biomass volume, a waste outlet port for discharging biomass conversion by-products, a gas inlet for receiving heated oxidizing gas, a gas outlet for discharging generated biogas and a burner manifold for distributing oxidizing gas within the chamber to react the biomass. The burner manifold includes primary tubes and secondary tubes, positioned in a vertically lower part of the chamber and configured with multiple openings or ports for dispensing the oxidizing gas, where the secondary tubes extend into, inject and evenly distribute the oxidizing gas into the biomass volume to optimize conversion to biogas.

摘要翻译： 用于将生物质转化为沼气的气化器系统包括具有用于接收生物量的生物质供应口的反应室，用于排放生物质转化副产物的废气出口，用于接收加热的氧化气体的气体入口， 沼气和燃烧器歧管，用于在室内分配氧化气体以使生物质反应。 燃烧器歧管包括初级管和次级管，定位在腔室的垂直下部，并配置有用于分配氧化气体的多个开口或端口，其中次级管延伸进入，注入并均匀分布氧化气体进入生物体积 以优化转化为沼气。

公开(公告)号：US06831313B2

公开(公告)日：2004-12-14

申请号：US10332481

申请日：2003-07-22

申请人： Kiyoshi Uchiyama ,  Carlos A. Paz de Araujo ,  Vikram Joshi ,  Narayan Solayappan ,  Jolanta Celinska ,  Larry D. McMillan

发明人： Kiyoshi Uchiyama ,  Carlos A. Paz de Araujo ,  Vikram Joshi ,  Narayan Solayappan ,  Jolanta Celinska ,  Larry D. McMillan

IPC分类号： H01L2972

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/28291 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

摘要： A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.

摘要翻译： 铁电存储器（436）包括多个存储单元（73,82,100），每个存储单元包含具有铁电元件（18）和电介质元件（19）的显微复合材料的铁电薄膜（15），所述电介质 组分是与铁电体组分不同的化合物。 电介质成分优选为磁通量，即具有比铁电体成分高的结晶速度的材料。 添加磁通管允许铁电薄膜在400℃和550℃之间的温度下结晶。

公开(公告)号：US06607980B2

公开(公告)日：2003-08-19

申请号：US09781930

申请日：2001-02-12

申请人： Kiyoshi Uchiyama ,  Carlos A. Paz de Araujo ,  Keisuke Tanaka

发明人： Kiyoshi Uchiyama ,  Carlos A. Paz de Araujo ,  Keisuke Tanaka

IPC分类号： H01L2144

CPC分类号： C23C18/1216 ,  C23C18/1225 ,  C23C18/1279 ,  C23C18/1283 ,  C30B29/68 ,  C30B33/00 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/28291 ,  H01L21/31691 ,  H01L29/78391

摘要： A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid temperature pulsing anneal (“RPA”) technique with a ramp rate of 30° C./second at a hold temperature of 650° C. for a holding time of 30 minutes. The RPA technique includes applying a plurality of rapid-temperature heat pulses in sequence.

摘要翻译： 用于形成层状超晶格材料的液体前体被施加到集成电路基板。 使用快速温度脉冲退火（“RPA”）技术将前体涂层在氧气中退火，在650℃的保持温度下以30℃/秒的升温速率保持30分钟的保持时间。 RPA技术包括依次应用多个快速加热脉冲。

公开(公告)号：US4998859A

公开(公告)日：1991-03-12

申请号：US246406

申请日：1988-09-19

申请人： Zinichiro Oshima ,  Kiyoshi Uchiyama ,  Ikuo Nanno

发明人： Zinichiro Oshima ,  Kiyoshi Uchiyama ,  Ikuo Nanno

IPC分类号： B25J21/00 ,  B65G49/00 ,  B65G49/07 ,  B65G54/02 ,  H01L21/677

CPC分类号： H01L21/67748 ,  H01L21/67754 ,  Y10T29/53178 ,  Y10T29/53196 ,  Y10T29/53261

摘要： A transferring apparatus comprises a vacuum chamber, a carrier member disposed inside a pipe which communicates with the vacuum chamber, magnetic means installed in a support structure which is moved by a driving means. The carrier member is floated and pulled in its axial direction by magnetic force produced by the magnetic means, whereby an object placed on the tip of a manipulator arm which is connected to the carrier member is transferred in the vacuum chamber. Since the carrier member is floated inside the pipe and moved in its axial direction without contact to the pipe or any other parts, there are no portions inside the pipe which relatively move in contact with each other, and thus fine particles are not generated inside the pipe. This effectively eliminates adhesion of fine particles to objects such as semiconductor devices being transferred in a vacuum chamber.

摘要翻译： 传送装置包括真空室，设置在与真空室连通的管内的载体构件，安装在由驱动装置移动的支撑结构中的磁性装置。 载体构件通过由磁性装置产生的磁力在其轴向上浮起并拉动，由此将放置在连接到载体构件的操纵臂的尖端上的物体转移到真空室中。 由于载体构件在管内浮动而不与管或其它部分接触而在其轴向上移动，所以管内没有相对移动的部分彼此接触，因此在内部不会产生细小颗粒 管。 这有效地消除了细颗粒对诸如在真空室中转移的半导体器件的物体的粘附。