Invention Grant
- Patent Title: Semiconductor device having a conductive layer with a cobalt tungsten phosphorus coating and a manufacturing method thereof
- Patent Title (中): 具有具有钴钨磷涂层的导电层的半导体器件及其制造方法
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Application No.: US10149481Application Date: 2001-10-12
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Publication No.: US06878632B2Publication Date: 2005-04-12
- Inventor: Takeshi Nogami , Naoki Komai , Hideyuki Kito , Mitsuru Taguchi
- Applicant: Takeshi Nogami , Naoki Komai , Hideyuki Kito , Mitsuru Taguchi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein, Nath & Rosenthal LLP
- Priority: JP2000-311465 20001012
- International Application: PCTJP01/08989 WO 20011012
- International Announcement: WO0231876 WO 20020418
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/288 ; H01L21/306 ; H01L21/3205 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/311
Abstract:
A semiconductor device capable of suppressing diffusion of copper at an interface between a copper wire and a cap film to enhance an electromigration resistance to ensure reliability of the copper wire, and a manufacturing method thereof are provided. The semiconductor device according to the present invention comprises an insulating film (12) formed on a substrate (11), a concave portion (13) (for example, a groove) formed in the insulating film, a conductive layer (15) embedded in the concave portion through a barrier layer (14), and a cobalt tungsten phosphorus coating (16) to connect with the barrier layer on the side of the conductive layer and to coat the conductive layer on the opening side of the concave portion.
Public/Granted literature
- US20030119317A1 Semiconductor device and production method therefor Public/Granted day:2003-06-26
Information query
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