发明授权
- 专利标题： Method of forming oxynitride film or the like and system for carrying out the same
- 专利标题（中）： 形成氮氧化物膜等的方法及其实施方法
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申请号： US09864374申请日： 2001-05-25
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公开(公告)号： US06884295B2公开(公告)日： 2005-04-26
- 发明人: Katsutoshi Ishii , Kazutoshi Miura
- 申请人： Katsutoshi Ishii , Kazutoshi Miura
- 申请人地址： JP Tokyo-To
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo-To
- 代理机构： Smith, Gambrell & Russell, LLP
- 优先权： JP2000-162950 20000531; JP2000-157879 20000529
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/316 ; H01L21/318 ; C23C16/00
摘要：
This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.
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