公开(公告)号：US06884295B2

公开(公告)日：2005-04-26

申请号：US09864374

申请日：2001-05-25

申请人： Katsutoshi Ishii ,  Kazutoshi Miura

发明人： Katsutoshi Ishii ,  Kazutoshi Miura

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C16/00

CPC分类号： H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

摘要： This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.

摘要翻译： 本发明是一种氮氧化物膜形成方法，包括：将反应室加热到预定温度的反应室加热步骤，反应室包含待处理物体; 将处理气体加热到能够形成氮氧化物膜的反应温度以上的气体加热工序，由二氧化氮气体构成的工艺气体; 以及通过将加热的处理气体供给到加热处理室中而在被处理物上形成氮氧化物膜的成膜工序。 在反应室加热步骤中将反应室加热的温度设定在低于处理气体发生反应的温度的温度。

公开(公告)号：US6110286A

公开(公告)日：2000-08-29

申请号：US175433

申请日：1998-10-20

申请人： Seungho Oh ,  Katsutoshi Ishii ,  Toshiharu Nishimura ,  Yutaka Takahashi

发明人： Seungho Oh ,  Katsutoshi Ishii ,  Toshiharu Nishimura ,  Yutaka Takahashi

IPC分类号： H01L21/22 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/54 ,  C30B25/14 ,  H01L21/67017

摘要： A vertical processing unit 10 for semiconductor wafers has; a cylindrical processing chamber 2 having an opening 18 in an inside of an annular bottom surface, and a disk-shaped cap 6 having an annular abutting-surface 32 abutting on the annular bottom surface of the chamber. A mounting-surface 6p formed on the inside of the annular abutting-surface 32. A wafer-boat 8 for holding a wafer W to be processed is mounted on the mounting-surface 6p of the cap 6. The abutting-surface 32 has an annular groove 34A formed therein. An inert gas supply passgeway 38 is provided in communication with the annular groove 34A for supplying an inert gas into the annular groove 34A through a header 16. An ejection opening 36 for ejecting an inert gas is provided on the inner side of the annular groove 34A for communicating the annular groove 34A and the interior of the processing chamber 2. Owing to the active leaking of the nitrogen (N.sub.2) gas into the interior of the processing chamber 2 through the ejection opening 36, the corrosive gas as a processing gas in the processing chamber 2 does not leak out, so that corrosion or rusting of the equipment around the processing chamber 2 is prevented.

摘要翻译： 用于半导体晶片的垂直处理单元10具有： 在环形底面的内侧具有开口18的圆筒状的处理室2和与该室的环状底面邻接的环状的抵接面32的圆盘状的盖6。 安装表面6p，形成在环形邻接表面32的内侧。用于保持待处理晶片W的晶片舟8安装在盖6的安装表面6p上。邻接表面32具有 形成在其中的环形槽34A。 惰性气体供给接头38与环形槽34A连通，用于通过集管16将惰性气体供给到环形槽34A中。用于喷射惰性气体的喷射口36设置在环形槽34A的内侧 用于使环形槽34A和处理室2的内部连通。由于氮气（N 2）气体通过喷射开口36有效地泄漏到处理室2的内部，腐蚀性气体作为处理气体 处理室2不会泄漏，从而防止了处理室2周围的设备的腐蚀或生锈。

公开(公告)号：USD427570S

公开(公告)日：2000-07-04

申请号：US74295

申请日：1997-07-24

申请人： Katsutoshi Ishii

设计人： Katsutoshi Ishii

公开(公告)号：USD424527S

公开(公告)日：2000-05-09

申请号：US074283

申请日：1997-07-24

申请人： Katsutoshi Ishii

设计人： Katsutoshi Ishii

公开(公告)号：USD405428S

公开(公告)日：1999-02-09

申请号：US74285

申请日：1997-07-24

申请人： Katsutoshi Ishii

设计人： Katsutoshi Ishii

公开(公告)号：USD404372S

公开(公告)日：1999-01-19

申请号：US83715

申请日：1998-02-12

申请人： Katsutoshi Ishii

设计人： Katsutoshi Ishii

公开(公告)号：USD404016S

公开(公告)日：1999-01-12

申请号：US74282

申请日：1997-07-24

申请人： Katsutoshi Ishii

设计人： Katsutoshi Ishii

公开(公告)号：US5820683A

公开(公告)日：1998-10-13

申请号：US651887

申请日：1996-05-22

申请人： Katsutoshi Ishii ,  Isao Hagino ,  Mitsuo Mizukami

发明人： Katsutoshi Ishii ,  Isao Hagino ,  Mitsuo Mizukami

IPC分类号： C23C16/458 ,  H01L21/673 ,  C23C16/00

CPC分类号： H01L21/67309 ,  C23C16/4583

摘要： A boat includes a boat body, a top plate mounted on one end and a bottom plate mounted on the other end of the boat body. The boat body has a prop section and the prop section has a plurality of support portions provided parallel to each other along its longitudinal direction and each having a substantially circular arc-like configuration. The support portion has an opening at a front side to allow the forward end of an arm to be entered into an inside of the support portion to transfer a wafer W. Another opening is provided in a back section of a prop section at an area corresponding to the opening to allow the forward end of the arm to extend through it. The support portion supports the wafer W with the wafer edge portion set on its rest surface. The support portion and its rest surface are so formed as to have a substantially circular arc-configuration. By doing so, the rest surface of the support portion supports the wafer edge portion over as greater a length as possible. The rest surface of the support portion has its flatness set to be not more than 0.1 mm. When the wafer W is placed on the rest surface, the rear surface of the wafer edge portion is set substantially in face contact with the rest surface of the support portion.

摘要翻译： 船包括船体，安装在一端的顶板和安装在船体另一端的底板。 船体具有支柱部分，并且支柱部分具有沿着其纵向方向彼此平行设置的多个支撑部分，并且每个支撑部分具有大致圆弧状的构造。 支撑部分具有在前侧的开口，以允许臂的前端进入支撑部分的内部以传送晶片W.另一个开口设置在支撑部分的背部的对应的区域 到开口以允许臂的前端延伸穿过它。 支撑部分支撑晶片W，晶片边缘部分设置在其支撑表面上。 支撑部分及其支撑面形成为具有大致圆弧形状。 通过这样做，支撑部分的剩余表面支撑晶片边缘部分尽可能长的长度。 支撑部的其余表面的平坦度设定为不大于0.1mm。 当将晶片W放置在其余表面上时，晶片边缘部分的后表面基本上与支撑部分的其余表面接触。

公开(公告)号：USD380454S

公开(公告)日：1997-07-01

申请号：US47278

申请日：1995-11-30

申请人： Hiroyuki Iwai ,  Katsutoshi Ishii ,  Hitoshi Kato

设计人： Hiroyuki Iwai ,  Katsutoshi Ishii ,  Hitoshi Kato

公开(公告)号：US08834817B2

公开(公告)日：2014-09-16

申请号：US12706734

申请日：2010-02-17

申请人： Masahisa Watanabe ,  Katsutoshi Ishii ,  Tetsuya Shibata

发明人： Masahisa Watanabe ,  Katsutoshi Ishii ,  Tetsuya Shibata

IPC分类号： C01F7/00 ,  C23C16/44

CPC分类号： C23C16/4405 ,  Y02C20/30 ,  Y02P70/605

摘要： A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

摘要翻译： 使用分批式热处理装置的方法包括进行从处理容器的石英内表面除去作为金属杂质存在的铝的准备工序，对保持在保持部件上的产品基板进行主热处理 过程容器经过准备过程。 该准备过程包括：放置多个虚设基板，用于允许金属杂质沉积在其中没有产品基板的处理容器内; 然后，将含氯气体和水蒸气供给到处理容器中，并在处理温度下加热处理容器的石英内表面，从而对石英内表面进行烘烤处理，以从石英内表面排出金属杂质 并将金属杂质沉积到虚设基板上; 然后从沉积在其上的金属杂质从反应容器卸载虚设基板。