Invention Grant
- Patent Title: Power-up signal generator for semiconductor memory devices
- Patent Title (中): 用于半导体存储器件的上电信号发生器
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Application No.: US10255999Application Date: 2002-09-26
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Publication No.: US06885605B2Publication Date: 2005-04-26
- Inventor: Kang Seol Lee , Jae Jin Lee , Kee Teok Park
- Applicant: Kang Seol Lee , Jae Jin Lee , Kee Teok Park
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR2001-82255 20011221
- Main IPC: H03K19/00
- IPC: H03K19/00 ; G11C5/14 ; G11C7/00 ; G11C7/20 ; G11C11/407 ; G11C11/4072 ; G11C11/4074 ; G11C11/4193

Abstract:
A power-up signal generator uses a deep power down power-up signal, which should be in a standby state in a deep power down entry, for an initialization of other semiconductor elements in a DRAM device that operates after an internal power supply voltage is generated. The generator also uses the power-up signal, which is disabled in the deep power down entry and enabled in a deep power down exit by the internal power supply voltage. The generator may include a power-up detector for generating a power-up detection signal, a deep power down power-up signal generator for generating a deep power down power-up signal, a power-up signal generator for generating a power-up signal and a power-up controller for determining whether or not to enable the power-up signal in the deep power down entry.
Public/Granted literature
- US20030117875A1 Power-up signal generator for semiconductor memory devices Public/Granted day:2003-06-26
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