发明授权
- 专利标题： Reduced cap layer erosion for borderless contacts
- 专利标题（中）： 减少无边界接触的盖层侵蚀
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申请号： US10655199申请日： 2003-09-04
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公开(公告)号： US06890815B2公开(公告)日： 2005-05-10
- 发明人: Johnathan Faltermeier , Jeremy Stephens , David Dobuzinsky , Larry Clevenger , Munir D. Naeem , Chienfan Yu , Larry Nesbit , Rama Divakaruni , Michael Maldei
- 申请人： Johnathan Faltermeier , Jeremy Stephens , David Dobuzinsky , Larry Clevenger , Munir D. Naeem , Chienfan Yu , Larry Nesbit , Rama Divakaruni , Michael Maldei
- 申请人地址： DE Munich US NY Armonk
- 专利权人： Infineon Technologies AG,International Business Machines Corporation
- 当前专利权人： Infineon Technologies AG,International Business Machines Corporation
- 当前专利权人地址： DE Munich US NY Armonk
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/8242 ; H01L29/76
摘要：
A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes for the various material layers of the semiconductor device while forming the borderless contacts.
公开/授权文献
- US20050051839A1 REDUCED CAP LAYER EROSION FOR BORDERLESS CONTACTS 公开/授权日：2005-03-10
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