发明授权
- 专利标题： Magnetic memory device having soft reference layer
- 专利标题（中）： 具有软参考层的磁存储器件
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申请号： US10697191申请日： 2003-10-30
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公开(公告)号： US06891212B2公开(公告)日： 2005-05-10
- 发明人: Manish Sharma , Thomas C. Anthony , Lung Tran
- 申请人： Manish Sharma , Thomas C. Anthony , Lung Tran
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; H01L29/76
摘要：
A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.
公开/授权文献
- US20040089889A1 Magnetic memory device having soft reference layer 公开/授权日：2004-05-13
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