Invention Grant
- Patent Title: Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
- Patent Title (中): 用于分析半导体制造工艺中的外来颗粒的产生状态的方法和装置
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Application No.: US09805188Application Date: 2001-03-14
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Publication No.: US06894773B2Publication Date: 2005-05-17
- Inventor: Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
- Applicant: Hiroshi Morioka , Minori Noguchi , Yoshimasa Ohshima , Yukio Kembo , Hidetoshi Nishiyama , Kazuhiko Matsuoka , Yoshiharu Shigyo
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP
- Priority: JPP04-98095 19920417
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01N21/94 ; G01N21/95 ; G01N21/956 ; G01R31/308 ; H01J37/00 ; H01L21/00 ; H01L21/66 ; H01L21/68
Abstract:
A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.
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