发明授权
US06900123B2 BARC etch comprising a selective etch chemistry and a high polymerizing gas for CD control
有权
BARC蚀刻包括选择性蚀刻化学和用于CD控制的高聚合气体
- 专利标题： BARC etch comprising a selective etch chemistry and a high polymerizing gas for CD control
- 专利标题（中）： BARC蚀刻包括选择性蚀刻化学和用于CD控制的高聚合气体
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申请号： US10393317申请日： 2003-03-20
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公开(公告)号： US06900123B2公开(公告)日： 2005-05-31
- 发明人: Ping Jiang , Robert Kraft , Mark Somervell
- 申请人： Ping Jiang , Robert Kraft , Mark Somervell
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/027 ; H01L21/033 ; H01L21/311 ; H01L21/768 ; H01L21/4763
摘要：
A BARC etch comprises a selective etch chemistry in combination with a high-polymerizing gas for CD control. The BARC etch may be used in a via-first dual damascene method. After via (116) pattern and etch, a thick BARC layer (120) is deposited to fill the via (116) and coat the IMD (110). A trench resist pattern (125) is formed over the BARC layer (120). Then, the exposed portion of BARC (120) over the IMD (110) is etched using a high-polymerizing gas added to a selective etch chemistry. The more polymerizing gas passivates the trench resist (125) sidewall to preserve or improve the trench CD. During the main trench etch, portions of BARC (120) remain in the via to protect the etch-stop (104) at the bottom of the via (116).
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