Invention Grant
- Patent Title: Probing device and manufacturing method thereof, as well as testing apparatus and manufacturing method of semiconductor with use thereof
- Patent Title (中): 探测装置及其制造方法以及其使用的半导体的测试装置和制造方法
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Application No.: US10119077Application Date: 2002-04-10
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Publication No.: US06900646B2Publication Date: 2005-05-31
- Inventor: Susumu Kasukabe , Akio Hasebe
- Applicant: Susumu Kasukabe , Akio Hasebe
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly, Stanger & Malur, P.C.
- Priority: JP10-091289 19980403
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R1/067 ; G01R1/073 ; G01R3/00 ; G01R31/28 ; H01L21/66 ; H05K3/40 ; G01R31/02

Abstract:
A probing device for electrically contacting with a plurality of electrodes 3, 6 aligned on an object 1 to be tested so as to transfer electrical signal therewith, comprising: a wiring sheet being formed by aligning a plurality of contact electrodes 21, 110b, corresponding to each of said electrodes, each being planted with projecting probes 20, 110a covered with hard metal films on basis of a conductor thin film 41 formed on one surface of an insulator sheet 22 of a polyimide film by etching thereof, while extension wiring 23, 110c for electrically connecting to said each of said contact electrodes being formed on basis of a conductor thin film formed on either said one surface or the other surface opposing thereto of said insulator sheet of the polyimide film; and means for giving contacting pressure for obtaining electrical conduction between said extension wiring and said object to be tested by contacting tips of said projecting contact probe formed onto said each contact electrode through giving pressuring force between said wiring sheet and said object to be tested.
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