发明授权
- 专利标题： Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
- 专利标题（中）： 降低旋涂电介质厚膜应力的方法和所得夹心电介质结构
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申请号： US10893263申请日： 2004-07-19
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公开(公告)号： US06903029B2公开(公告)日： 2005-06-07
- 发明人: Ching-Fa Yeh , Yueh-Chuan Lee , Chih-Chuan Hsu , Kwo-Hau Wu , Shuo-Cheng Wang
- 申请人： Ching-Fa Yeh , Yueh-Chuan Lee , Chih-Chuan Hsu , Kwo-Hau Wu , Shuo-Cheng Wang
- 申请人地址： TW Taipei
- 专利权人： National Science Council
- 当前专利权人： National Science Council
- 当前专利权人地址： TW Taipei
- 代理机构： Bacon & Thomas
- 优先权： TW90103958 20010221
- 主分类号： H01L21/312
- IPC分类号： H01L21/312 ; H01L21/316 ; H01L21/31 ; H01L21/469
摘要：
The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
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