- 专利标题： High permeability thin films and patterned thin films to reduce noise in high speed interconnections
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申请号： US10370821申请日： 2003-02-20
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公开(公告)号： US06903444B2公开(公告)日： 2005-06-07
- 发明人: Leonard Forbes , Kie Y. Ahn , Salman Akram
- 申请人： Leonard Forbes , Kie Y. Ahn , Salman Akram
- 申请人地址： US ID Boise
- 专利权人： Micron Technology Inc.
- 当前专利权人： Micron Technology Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg, Woessner & Kluth, P.A.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/8238 ; H01L21/8242 ; H01L23/522 ; H01L23/532 ; H01L23/58 ; H01L27/148 ; H01L29/768
摘要：
This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A pair of high permeability metal lines are formed on the first layer of insulating material. The pair of high permeability metal lines include permalloy and/or Ni45Fe55 films. A transmission line is formed on the first layer of insulating material and between and parallel with the pair of high permeability metal lines. A second layer of insulating material is formed on the transmission line and the pair of high permeability metal lines. And, the method includes forming a second layer of electrically conductive material on the second layer of insulating material.
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